Panasonic 2SC3979A, 2SC3979 Datasheet

Po wer Transistors

2SC3979, 2SC3979A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC3979
2SC3979A
2SC3979
2SC3979A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900

1000

900

1000

800

7
5
3
1

40

2

150

–55 to +150

FE

Unit

V

V

V
V
A
A
A

W

˚C
˚C

10.0±0.2 4.2±0.2

5.5±0.2

0.7±0.17.5±0.2

16.7±0.314.0±0.5

4.0

Solder Dip

5.08±0.5

1.7±0.2

1.05±0.1

0.8±0.1

2.54±0.3

123

TO–220 Full Pack Package(b)

4.2±0.2

φ3.1±0.1

Unit: mm

2.7±0.2

1.3±0.2

+0.2

0.5

–0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SC3979

2SC3979A
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.15A, f = 1MHz

IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V

min

800

8
6

typ10max

50
50
50

1.5

1.5

0.7

2.5

0.3

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3979, 2SC3979A

PC—Ta IC—V

60

)
W

(

50

C

(1)

40

30

20

(2)

10

(3)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

(4)

V

BE(sat)—IC

IC/IB=5

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

IB=900mA

C

25˚C

TC=25˚C

800mA
700mA
600mA

500mA
400mA
300mA

200mA

100mA

VCE=5V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

V

CE(sat)—IC

3

1

TC=100˚C

–25˚C

25˚C

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

fT—I

C

VCE=5V
f=1MHz
T

C

3

IC/IB=5

)

=25˚C

TC=–25˚C

1

25˚C

100˚C

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

CB

)

IE=0
f=1MHz

=25˚C

T

C

Collector current IC (A

1000

)
pF

(

300

ob

100

30

10

3

Cob—V

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

10

Forward current transfer ratio h

–25˚C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
0 1.60.4 1.20.8

)

Collector current IC (A

1

0.3

Transition frequency f

0.1

0.001

)

, tf — I

stg

t

t

on

t

f

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

)

Area of safe operation (ASO)

100

30

)

10

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

Non repetitive pulse

=25˚C

T

C

I

CP

I

C

10ms

t=1ms

DC

)

)

2