Panasonic 2SC3975 Datasheet

Po wer Transistors

2SC3975

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

800
800
500

8
20
10

5

100

3

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 6A
IC = 6A, IB = 1.2A
IC = 6A, IB = 1.2A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 6A, IB1 = 1.2A, IB2 = –2.4A,
VCC = 200V

min

500

15

8

typ20max

100
100

1.0

1.5

1.0

3.0

0.3

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3975

PC—Ta IC—V

120

)
W

(

100

C

80

60

40

20

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

=3W)

(P

C

(2)
(3)

V

BE(sat)—IC

TC=–25˚C

100˚C

IC/IB=5

25˚C

CE

12

10

)
A

(

8

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

25˚C

–25˚C

10

TC=25˚C

IB=100mA

50mA
40mA

30mA

20mA

10mA

5mA

C

VCE=5V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

V

CE(sat)—IC

TC=100˚C

3

1

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

3

1

IC/IB=5

=25˚C

C

)

0.3

Base to emitter saturation voltage V

0.1

0.1 1 10 1000.3 3 30

CB

)

IE=0
f=1MHz

=25˚C

T

C

Collector current IC (A

10000

)
pF

(

3000

ob

1000

300

100

30

Cob—V

Collector output capacitance C

10

1 3 10 30 100

Collector to base voltage VCB (V

3

Forward current transfer ratio h

1

0.1 1 10 1000.3 3 30

Collector current IC (A

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
0164128142106

)

Collector current IC (A

, tf — I

stg

t

on

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

stg

t

f

0.3

Transition frequency f

0.1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Area of safe operation (ASO)

100

30

I

CP

I

C

)

10

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=0.5ms

DC

1ms

)

2