Panasonic 2SC3971A Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC3971, 2SC3971A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC3971
2SC3971A
2SC3971
2SC3971A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

800
900
800
900
500

8
6
3

1.5
30

2

150

–55 to +150

FE

Unit

V

V

V
V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

2SC3971
2SC3971A

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1.2A
IC = 1.2A, IB = 0.24A
IC = 1.2A, IB = 0.24A
VCE = 10V, IC = 0.2A, f = 1MHz

IC = 1.2A, IB1 = 0.24A, IB2 = – 0.48A,
VCC = 200V

min

500

15

8

typ20max

100
100
100

1.0

1.5

1.0

3.0

0.3

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3971, 2SC3971A

PC—Ta IC—V

40

)
W

(

(1)

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

Collector current IC (A

IC/IB=5

)

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

–25˚C

25˚C

10

3

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

IB=400mA

300mA
200mA

100mA
50mA

20mA

C

VCE=5V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

0.3

Transition frequency f

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

C

3

1

0.001

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

IC/IB=5

)

=25˚C

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO) ton, t

)
µs

(
,t
,t

Switching time t

)

100

30

10

f
stg

3

on

1

0.3

0.1

0.03

0.01
04132

10

I

CP

3

I

C

C

0.03

0.01

0.003

0.001

1

0.3

0.1

10ms

Non repetitive pulse
T

=25˚C

C

1 10 100 10003 30 300

t=0.5ms

DC

Collector to emitter voltage VCE (V

1ms

, tf — I

stg

t

on

t

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

f

Collector current IC (A

)