Panasonic 2SC3946 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SC3946
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
Features
■
●
High collector to emitter V
●
Large collector power dissipation P
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
CEO
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
=25˚C)
C
Ratings
350
300
7.5
400
200
15
2.0
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
C
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
CER
V
CEO
h
FE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = 200V, IE = 0
VEB = 5V, IC = 0
IC = 100µA, IE = 0
IC = 5mA, IB = 0
IC = 100µA, IB = 0, RBE = 1kΩ
IE = 100µA, IC = 0
VCB = 10V, IC = 10mA
IC = 50mA, IB = 5mA
VCE = 30V, IC = 10mA, f = 1MHz
VCB = 50V, IE = 0, f = 1MHz
min
350
300
350
7.5
40
50
typ max
2
2
250
1
5
Unit
µA
µA
V
V
V
V
V
MHz
pF
1
Po wer Transistors 2SC3946
PC—Ta IC—V
20
)
W
(
16
C
12
8
4
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
V
(
10
CE(sat)
3
1
0.3
TC=100˚C
0.1
0.03
–25˚C
25˚C
TC=Ta
IC/IB=10
CE
200
160
)
mA
(
C
120
80
Collector current I
40
0
020164128
)
Collector to emitter voltage VCE (V
hFE—I
1000
FE
300
100
30
10
3
Forward current transfer ratio h
TC=100˚C
–25˚C
IB=2.0mA
C
25˚C
TC=25˚C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
VCE=10V
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
02.01.60.4 1.20.8
)
200
)
160
MHz
(
T
120
80
40
Transition frequency f
IC—V
BE
25˚C
TC=75˚C
VCE=10V
–25˚C
Base to emitter voltage VBE (V
fT—I
E
VCB=30V
f=1MHz
=25˚C
T
C
)
0.01
Collector to emitter saturation voltage V
1 30010010330
Collector current IC (mA
)
pF
(
Cob—V
20
16
ob
12
8
4
CB
IE=0
f=1MHz
=25˚C
T
C
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
1
1 30010010330
)
Collector current IC (A
)
0
–1 –10 –100 –1000–3 –30 –300
Emitter current IE (A
)
Area of safe operation (ASO)
)
A
(
Collector current I
)
10
3
1
I
CP
C
0.3
I
C
0.1
0.03
0.01
0.003
0.001
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
DC
1ms
Single pulse
=25˚C
T
C
t=10ms
)
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