Panasonic 2SC3944A, 2SC3944 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
Features
■
●
Satisfactory foward current transfer ratio hFE vs. collector current I
characteristics
●
●
●
C
High transition frequency f
T
Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
Full-pack package which can be installed to the heat sink with
one screw
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SC3944
2SC3944A
2SC3944
2SC3944A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector to base
voltage
Emitter to base voltage
2SC3944
2SC3944A
2SC3944
2SC3944A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Rank Q R
h
FE1
95 to 155 130 to 220
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
=25˚C)
C
Ratings
150
180
150
180
5
1.5
1
15
2.0
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = 150V, IE = 0
VCB = 180V, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –50mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz
TO–220 Full Pack Package(a)
min
typ
150
180
5
95
50
160
100
0.5
1
200
30
max
10
10
220
2
2
50
1:Base
2:Collector
3:Emitter
Unit
µA
V
V
V
V
MHz
pF
1
Po wer Transistors 2SC3944, 2SC3944A
PC—Ta V
25
)
W
(
20
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE—I
C
1000
T
FE
300
100
30
10
3
Forward current transfer ratio h
1
0.01 0.1 10.03 0.3
=100˚C
C
25˚C
–25˚C
Collector current IC (A
TC=Ta
VCE=10V
)
)
CE(sat)—IC
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 10.03 0.3
)
Collector current IC (A
TC=100˚C
25˚C
–25˚C
fT—I
400
)
MHz
300
(
T
200
100
IC/IB=10
)
E
VCB=10V
f=10MHz
=25˚C
T
C
Transition frequency f
10
)
V
(
BE(sat)
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
100
)
pF
(
80
ob
60
40
20
V
BE(sat)—IC
3
1
0.01 0.1 10.03 0.3
TC=–25˚C
100˚C
25˚C
Collector current IC (A
Cob—V
CB
IC/IB=10
)
IE=0
f=1MHz
=25˚C
T
C
Collector output capacitance C
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
Emitter current IE (A
)
0
1 3 10 30 100
Collector to base voltage VCB (V
)
Area of safe operation (ASO)
10
3
I
CP
)
1
A
(
I
C
C
0.3
0.1
0.03
0.01
Collector current I
0.003
0.001
1 10 100 10003 30 300
DC
t=10ms
1ms
Collector to emitter voltage VCE (V
2
Single pulse
=25˚C
T
C
t=<50µs
2SC3944
2SC3944A
)
Loading...