Panasonic 2SC3943 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC3943

Silicon NPN epitaxial planar type

For video amplifier

Features

■

●

Small transition frequency f

●

Small collector output capacitance C

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

T

Symbol

V

CBO

V

CER

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

ob

=25˚C)

C

Ratings

110
100

50

3.5
300
150

8

2.0
150

–55 to +150

Unit

V
V
V

V
mA
mA

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

C

Symbol

I

CEO

V

CBO

V

CER

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T1

f

T2

C

ob

=25˚C)

Conditions

VCE = 35V, IB = 0
IC = 100µA, IE = 0
IC = 500µA, RBE = 470Ω
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 100mA
IC = 150mA, IB = 15mA
VCE = 10V, IC = 10mA, f = 10MHz
VCE = 10V, IC = 110mA, f = 10MHz
VCB = 30V, IE = 0, f = 1MHz

min

110
100

50

3.5
20

typ

300
350

3.5

max

10

0.5

Unit

µA

V
V
V
V

V
MHz
MHz

pF

1

Po wer Transistors 2SC3943

PC—Ta IC—V

12

)
W

(

10

C

8

6

4

2

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

V

CE(sat)—IC

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 30010010330

TC=100˚C

–25˚C

25˚C

Collector current IC (mA

TC=Ta

)

IC/IB=10

)

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

012108264

IB=5.0mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

100

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

TC=100˚C

–25˚C

25˚C

Collector current IC (mA

TC=25˚C

4.5mA

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

=5V

V

CE

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

IC—V

BE

VCE=5V

TC=100˚C

25˚C

–25˚C

fT—I

E

VCB=10V
f=10MHz
T

C

Emitter current IE (mA

)

=25˚C

)

Cob—V

6

)
pF

(

5

ob

4

3

2

1

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

1000

I

CP

300

I

100

C

100ms

C

30

10

3

1

0.3

0.1
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

DC

t=10ms

Single pulse
Ta=25˚C

)