Panasonic 2SC3942 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC3942

Silicon NPN triple diffusion planar type

For color TV chroma output

Features

■

●

High collector to emitter V

●

Small collector output capacitance C

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

ob

=25˚C)

C

Ratings

300
300

7
200
100

10

2.0

150

–55 to +150

Unit

V
V

V
mA
mA

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

C

Symbol

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCE = 200V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 50V, IC = 5mA
VCE = 10V, IC = 30mA
IC = 30mA, IB = 3mA
VCE = 30V, IC = 20mA, f = 10MHz
VCB = 30V, IE = 0, f = 1MHz

min

300
300

7

50

70

typ

140

2.7

max

10

250

1.2

1.5

Unit

µA

V
V
V

V
V

MHz

pF

1

Po wer Transistors 2SC3942

PC—Ta IC—V

20

)

18

W

(

16

C

14

12

10

8

6

4

2

Collector power dissipation P

0

0 18060 12040 100 16020 80 140

Ambient temperature Ta (˚C

V

CE(sat)—IC

)
V

(

3

IC/IB=10

CE(sat)

1

0.3

TC=100˚C

0.1
25˚C

–25˚C

0.03

0.01

Collector to emitter saturation voltage V

1 3 10 30 100

Collector current IC (mA

TC=Ta

)

)

CE

120

TC=25˚C

100

)
mA

(

80

C

60

40

Collector current I

20

0

060504010 3020

IB=2.0mA

Collector to emitter voltage VCE (V

hFE—I

C

1000

FE

300

TC=100˚C

100

30

10

Forward current transfer ratio h

–25˚C

3

1

1 10 100330

VCE=50V

25˚C

Collector current IC (mA

1.6mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

240
220

)

200

MHz

180

(

T

160
140
120
100

80
60
40

Transition frequency f

20

0

–1 –3 –10 –30 –100

IC—V

BE

25˚C

TC=100˚C

–25˚C

fT—I

E

Emitter current IE (mA

VCE=10V

VCB=30V
f=10MHz
T

=25˚C

C

)

)

Cob—V

1.0

)
pF

(

0.8

ob

0.6

0.4

0.2

Collector output capacitance C

0

1 10 100 10003 30 300

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

1000

300

I

CP

100

I

C

C

30

10

3

1

0.3

0.1
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Single pulse

=25˚C

T

C

t=2ms

DC

)