Panasonic 2SC3941 Datasheet
Transistor
2SC3941
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SB1221
Features
■
●
High collector to emitter voltage V
●
High transition frequency fT.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
300
300
7
100
70
1
150
Unit
V
V
V
mA
mA
W
˚C
˚C
1.27
5.0±0.2
123
2.54±0.15
0.7±0.2
0.7±0.1
0.45
1.27
+0.15
–0.1
8.0±0.2
13.5±0.5
0.45
2.3±0.2
Unit: mm
4.0±0.2
+0.15
–0.1
1:Emitter
2:Collector
3:Base
TO–92NL Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
hFE Rank classification
Symbol
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Rank P Q R
h
FE
30 ~ 100 60 ~ 150 100 ~ 220
Conditions
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 1µA, IC = 0
*
VCB = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
300
7
30
50
typ
80
max
Unit
2
µA
V
V
220
1.2
V
MHz
4
8
pF
1
Transistor
2SC3941
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — I
B
120
100
)
mA
(
80
C
60
VCE=10V
Ta=25˚C
Ta=75˚C
IC — V
25˚C
–25˚C
IB — V
BE
BE
VCE=10V
VCE=10V
Ta=25˚C
)
CE
120
100
)
mA
(
80
0.8mA
C
60
40
Collector current I
20
0
0 2.01.60.4 1.20.8
)
Collector to emitter voltage VCE (V
)
100
V
(
30
CE(sat)
10
3
1
1.2mA
1.0mA
1.4mA
V
1.6mA
CE(sat)
1.8mA
— I
Ta=25˚C
IB=2mA
0.6mA
0.4mA
0.2mA
C
IC/IB=10
Ta=75˚C
120
100
)
mA
(
C
Collector current I
)
)
mA
(
B
80
60
40
20
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
3.0
2.5
2.0
1.5
40
Collector current I
20
0
02.01.60.4 1.20.8
Base current IB (mA
hFE — I
C
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
VCE=10V
25˚C
–25˚C
Collector current IC (mA
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
)
)
Collector current IC (mA
160
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
–1 –3 –10 –30 –100
Emitter current IE (mA
fT — I
25˚C
–25˚C
)
E
VCB=10V
Ta=25˚C
1.0
Base current I
0.5
0
01.00.80.2 0.60.4
Base to emitter voltage VBE (V
)
pF
(
Cob — V
10
8
ob
6
4
2
CB
IE=0
f=1MHz
Ta=25˚C
)
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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