Panasonic 2SC3940A, 2SC3940 Datasheet

Transistor

2SC3940, 2SC3940A

Silicon NPN epitaxial planer type

For low-frequency output amplification and driver amplification
Complementary to 2SA1534 and 2SA1534A

Features

■

●

Low collector to emitter saturation voltage V

●

Allowing supply with the radial taping.

CE(sat)

.

5.0±0.2

Unit: mm

4.0±0.2

8.0±0.2

0.7±0.2

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SC3940
2SC3940A
2SC3940

2SC3940A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

2SC3940
2SC3940A
2SC3940
2SC3940A

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Ratings

30
60
25
50

5

1.5
1
1

150

–55 ~ +150

Unit

V

V

V
A

A
W
˚C
˚C

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCE = 10V, IC = 500mA
VCE = 5V, IB = 1A

*2

IC = 500mA, IB = 50mA
IB = 500mA, Ia = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

0.7±0.1

13.5±0.5

+0.15

+0.15

–0.1

–0.1

0.45

0.45

123

2.54±0.15

min

30
60
25
50

5

85

1.27

2.3±0.2

1:Emitter
2:Collector
3:Base
TO–92NL Package

typ

max

0.1

340

Unit

µA

V

V

V

1.27

*2

50

*2

*2

0.2

0.85
200

11

*2

Pulse measurement

0.4

1.2

20

V
V

MHz

pF

1

Transistor 2SC3940, 2SC3940A

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=10

)

CE

1.5

1.25

)
A

(

1.0

C

0.75

0.5

Collector current I

0.25

0

0108264

Ta=25˚C

IB=10mA

9mA

8mA
7mA

6mA

5mA

4mA

3mA
2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

C

IC/IB=10

Ta=–25˚C

75˚C

)

1.2
VCE=10V

Ta=25˚C

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Base current IB (mA

hFE — I

600

FE

500

400

300

Ta=75˚C

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

25˚C
–25˚C

B

)

C

VCE=10V

)

fT — I

200

VCB=10V
Ta=25˚C

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

E

50

)
pF

(

40

ob

30

20

10

Collector output capacitance C

0

)

Collector to base voltage VCB (V

Cob — V

1 3 10 30 100

CB

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

)

Base to emitter resistance RBE (kΩ

V

— R

CER

0

0.1 1 10 1000.3 3 30

BE

IC=10mA
Ta=25˚C

2SC3940A

2SC3940

)