Panasonic 2SC3939 Datasheet

Transistor

2SC3939

Silicon NPN epitaxial planer type

For low-frequency driver amplification
Complementary to 2SA1533

Features

■

●

High collector to emitter voltage V

●

Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

80
80

5
1

0.5
1

150

Unit

V
V
V
A

A
W
˚C
˚C

1.27

5.0±0.2

123

2.54±0.15

0.7±0.2

0.7±0.1

0.45

1.27

+0.15
–0.1

8.0±0.2

13.5±0.5

0.45

2.3±0.2

Unit: mm

4.0±0.2

+0.15
–0.1

1:Emitter
2:Collector
3:Base
TO–92NL Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

130 ~ 220 185 ~ 330

Conditions

VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

80
80

5

130

50

typ

max

330

100

0.2

0.85
120

11

*2

Pulse measurement

0.1

0.4

1.2

20

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SC3939

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Ta=75˚C

25˚C

Collector current IC (mA

)

C

IC/IB=10

–25˚C

)

CE

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Ta=25˚C

IB=10mA

Collector current I

0.2

0

0108264

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01
1 10 100 10003 30 300

25˚C

C

IC/IB=10

Ta=–25˚C

75˚C

Collector current IC (mA

9mA
8mA

7mA
6mA

5mA
4mA
3mA

2mA

1mA

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

1 10 100 10003 30 300

Collector current IC (mA

IC — I

Ta=75˚C

25˚C

–25˚C

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

E

VCB=10V
Ta=25˚C

50

)

pF

(

40

ob

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

4

10

3

10

VCB=20V

I

CBO

— Ta

)

30

20

10

)
Ta

(

Ta=25˚C

(

CBO

I

CBO

I

2

10

10

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

1

0 18060 120

Ambient temperature Ta (˚C

)