Panasonic 2SC3938G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC3938G

Silicon NPN epitaxial planar type

For high-speed switching

■ Features

• Low collector-emitter saturation voltage V

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

CE(sat)

■ Package

• Code
SMini3-F2

• Marking Symbol: 2Y

• Pin Name

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (E-B short) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CES

EBO

C

CP

C

j

−55 to +150 °C

stg

40 V

40 V

5V

100 mA

300 mA

150 mW

150 °C

1. Base

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Turn-on time t

Turn-off time t

Storage time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

60 to 120 90 to 200

I

CBO

I

EBO

h

FE

CE(sat)IC

BE(sat)IC

T

ob

on

off

stg

VCB = 40 V, IE = 0 0.1 µA

VEB = 4 V, IC = 0 0.1 µA

VCE = 1 V, IC = 10 mA 60 200 

= 10 mA, IB = 1 mA 0.17 0.25 V

= 10 mA, IB = 1 mA 1 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz

VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF

Refer to the measurement circuit 17 ns

17 ns

10 ns

Publication date: April 2007 SJC00364AED

1

2SC3938G

This product complies with the RoHS Directive (EU 2002/95/EC).

Measurement circuit

ton , t

test circuit t

off

220 Ω

3.3 kΩ

V

= 10 V

IN

50 Ω

V

V

OUT

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 1.21.00.80.2 0.60.4

Collector-emitter voltage VCE (V

3.3 kΩ

VBB = −3 V

10%

90%

t

on

IC  V

10%

CE

IN

0.1 µF

50 Ω

V

= 3 V

CC

90%

t

off

Ta = 25°C

IB = 3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

PC  T

BE(sat)

 I

a

C

Ta = −25°C

75°C

)

)

25°C

test circuit

stg

V

OUT

V

= 10 V

IN

50 Ω

0.1 µF

V

V

OUT

A

910 Ω

500 Ω

500 Ω

= 2 V

V

BB

IN

t

stg

10%

10%

0.1 µF

90 Ω

V

CC

1 kΩ

= 10 V

V

OUT

(Waveform at A)

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

V

 I

100

CE(sat)

)

V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

)

0.1 1 10 100

Collector current IC (mA

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

)

100

)
V

(

BE(sat)

10

1

0.1

Base-emitter saturation voltage V

0.01

V

1 10 100 1 000

Collector current IC (mA

h

 I

600

500

FE

400

300

200

Forward current transfer ratio h

100

0

0.1 1 10 100

FE

Ta = 75°C

25°C

−25°C

Collector current IC (mA

2

C

VCE = 1 V

)

600

fT  I

500

)

MHz

(

400

T

300

200

Transition frequency f

100

0

−1 −10 −100

Emitter current IE (mA

SJC00364AED

E

VCB = 10 V

= 25°C

T

a

)

(pF)

ob

C

Collector output capacitance

−1 000

(Common base, input open circuited)

Cob  V

6

5

4

3

2

1

0

110100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)