Panasonic 2SC3937G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC3937G

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High forward transfer gain S

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga­zine packing

2



21e

T

■ Package

• Code

SMini3-F2

• Marking Symbol: 2W

• Pin Name

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

15 V

10 V

2V

80 mA

150 mW
150 °C

−55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Forward transfer gain S

Maximum unilateral power gain G

Noise figure NF VCE = 8 V, IC = 7 mA, f = 0.8 GHz 1.0 1.7 dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

I

VCB = 15 V, IE = 01µA

CBO

I

VEB = 1 V, IC = 01µA

EBO

VCE = 8 V, IC = 20 mA 50 300 

FE1

h

VCE = 1 V, IC = 3 mA 80 280

FE2

VCE = 8 V, IC = 20 mA, f = 0.8 GHz 6 GHz

T

VCB = 10 V, IE = 0, f = 1 MHz 0.7 1.2 pF

ob

2VCE = 8 V, IC = 20 mA, f = 0.8 GHz 13 dB

21e

VCE = 8 V, IC = 20 mA, f = 0.8 GHz 14 dB

UM

Publication date: April 2007 SJC00363AED

1

2SC3937G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

CE(sat)

Ta = 75°C, 25°C, −25°C

)
V

(

CE(sat)

100

10

1

0.1

a

C

IC / IB = 10

IC  V

hFE  I

Ta = 75°C

−25°C

25°C

CE

C

Ta = 25°C

350 µA

300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

VCE = 8 V

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

12

10

)

GHz
(

8

T

6

4

Transition frequency f

2

60

50

IB = 400 µA

)

mA

(

40

C

30

20

Collector current I

10

0

012108264

)

Collector-emitter voltage VCE (V

600

500

FE

400

300

200

Forward current transfer ratio h

100

IC  V

BE

VCE = 8 V

25°C

Ta = 75°C −25°C

Base-emitter voltage VBE (V

fT  I

C

VCE = 8 V
f = 800 MHz

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

2.4

(pF)

ob

2.0

C

1.6

1.2

0.8

0.4

Collector output capacitance

(Common base, input open circuited)

0

0.1 1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

GUM  I

24

)

dB

(

20

UM

16

12

8

4

C

VCE = 8 V
f = 800 MHz
T

= 25°C

a

)

0

0.1 1 10 100

Collector current IC (mA

NF  I

6

5

C

VCE = 8 V
(R
f = 800 MHz
T

)
dB

4

(

3

2

Noise figure NF

1

= 50 Ω)

g

= 25°C

a

)

Maximum unilateral power gain G

0

)

0.1 1 10 100

Collector current IC (mA

)

0

0.1 1 10 100

Collector current IC (mA

)

SJC00363AED