Panasonic 2SC3936G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC3936G

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios

• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing

■ Package

• Code
SMini3-F2

• Marking Symbol: K

• Pin Name

1. Base

2. Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +150 °C

stg

30 V

20 V

5V

30 mA

150 mW

150 °C

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Forward current transfer ratio

Transition frequency f

Reverse transfer capacitance C

(Common emitter)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank B C

h

FE

*

70 to 160 110 to 250

CBOIC

CEOIC

EBOIE

h

FE

= 10 µA, IE = 030V

= 2 mA, IB = 020V

= 10 µA, IC = 05V

VCE = 10 V, IC = 1 mA 70 250 

VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230 MHz

T

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.3 pF

re

Publication date: April 2007 SJC00362AED

1

2SC3936G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)
W

200

(m

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  V

60

50

)

mA
(

40

C

30

20

Collector current I

10

Ta = 75°C

25°C

−25°C

a

BE

)

VCE = 10 V

IC  V

12

IB = 100 µA

10

)

A

(m

8

C

6

4

Collector current I

2

0

0128164

Collector-emitter voltage VCE (V

V

CE(sat)

100

(V)

CE(sat)

10

1

0.1

25°C

CE

80 µA

 I

Ta = 25°C

60 µA

40 µA

20 µA

C

IC / IB = 10

Ta = 75°C

−25°C

IC  I

12

10

B

VCE = 10 V

= 25°C

T

a

)

mA
(

8

C

6

4

Collector current I

2

0

0 12040 16080

)

Base current IB (µA

hFE  I

300

250

FE

200

150

100

Forward current transfer ratio h

50

Ta = 75°C

25°C

−25°C

)

C

VCE = 10 V

0

0 2.01.60.4 1.20.8

Base-emitter voltage VBE (V

fT  I

600

500

)

MHz
(

400

T

300

200

Transition frequency f

100

0

− 0.1 −1 −10 −100

E

VCB = 10 V

6 V

Emitter current IE (mA

2

Ta = 25°C

)

Collector-emitter saturation voltage V

0.01

)

0.1 1 10 100

Collector current IC (mA)

Zrb  I

80

)

Ω

(

rb

60

40

20

E

f = 2 MHz

= 25°C

T

a

VCB = 6 V

10 V

Reverse transfer impedance Z

0

− 0.1 −1 −10

Emitter current IE (mA

)

0

0.1 1 10 100

Collector current IC (mA

Cre  V

2.4

2.0

(pF)

re

C

1.6

1.2

0.8

0.4

Reverse transfer capacitance

(Common emitter)

0

0.1 1 10 100

CE

Collector-emitter voltage VCE (V

)

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a

)

SJC00362AED