Panasonic 2SC3935 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3935

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■ Features

• High transition frequency f

• Small collector output capacitance (Common base, input open cir-

cuited) C

and reverse transfer capacitance (Common base) C

ob

• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

T

CBO

CEO

EBO

C

C

j

stg

15 V

10 V

3V

50 mA

150 mW

150 °C

−55 to +150 °C

+0.1

0.3

–0.0

2.1±0.1

rb

132

(0.65)

(0.65)

1.3±0.1

2.0±0.2

10˚

1.25±0.10 (0.425)

+0.2

–0.1

0.9

0.9±0.10 to 0.1

+0.10

0.15

–0.05

5˚

0.2±0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

Marking Symbol: 1S

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

hFE ratio ∆h

Collector-emitter saturation voltage V

CEOIC

EBOIE

I

CBO

I

CEO

FE1

h

FE2

FE

CE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Reverse transfer capacitance C
(Common base)

Collector-base parameter rbb' • CCVCB = 4 V, IE = −5 mA, f = 31.9 MHz 11.8 13.5 ps

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Rank classification

Rank P Q

2: ∆h

*

h

FE

= h

FE

75 to 130 110 to 220

/ h

FE2

FE1

= 2 mA, IB = 010V

= 10 µA, IC = 03V

VCB = 10 V, IE = 01µA

VCE = 10 V, IB = 010µA

1

*

VCE = 2.4 V, IC = 7.2 mA 75 220 

VCE = 2.4 V, IC = 100 µA75

2

*

h

: VCE = 2.4 V, IC = 100 µA 0.75 1.60 

FE2

h

: VCE = 2.4 V, IC = 7.2 mA

FE1

= 20 mA, IB = 4 mA 0.5 V

VCB = 4 V, IE = −7.2 mA, f = 200 MHz 1.4 1.9 2.5 GHz

T

VCB = 4 V, IE = 0, f = 1 MHz 0.9 1.1 pF

ob

VCB = 4 V, IE = 0, f = 1 MHz 0.25 0.35 pF

rb

Publication date: February 2004 SJC00145CED

1

2SC3935

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

25°C

a

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

hFE  I

Ta = 75°C

25°C

−25°C

CE

C

Ta = 25°C

= 500 µA

I

B

400 µA

300 µA

200 µA

100 µA

VCE = 4 V

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0 2.01.60.4 1.20.8

)

4

)

3

GHz
(

T

2

1

Transition frequency f

80

)

60

mA

(

C

40

20

Collector current I

0

012108264

)

Collector-emitter voltage VCE (V

360

300

FE

240

180

120

Forward current transfer ratio h

60

IC  V

BE

25°C

Ta = 75°C

VCE = 4 V

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = 4 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

1.6

(pF)

ob

C

1.2

0.8

0.4

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

)

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

)

SJC00145CED