Panasonic 2SC3934 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3934

Silicon NPN epitaxial planar type

For high-frequency wide-band low-noise amplification

+0.1

0.3

–0.0

0.15

Unit: mm

+0.10
–0.05

■ Features

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

T

2.1±0.1

1.25±0.10 (0.425)

5˚

+0.2

–0.1

0.9

0.9±0.10 to 0.1

SMini3-G1 Package

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

15 V

12 V

2.5 V

30 mA

50 mA

150 mW
150 °C

132

(0.65)

(0.65)

1.3±0.1

2.0±0.2

10˚

Marking Symbol: 1U

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Forward transfer gain S

Maximum unilateral power gain G

Noise figure NF VCE = 10 V, IC = 5 mA, f = 0.8 GHz 1.3 2.5 dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

I

VCB = 10 V, IE = 0 100 nA

CBO

I

VEB = 2 V, IC = 01µA

EBO

VCE = 10 V, IC = 10 mA 40 

FE

VCE = 10 V, IC = 10 mA, f = 0.8 GHz 4.5 GHz

T

VCB = 10 V, IE = 0, f = 1 MHz 1.2 pF

ob

2VCE = 10 V, IC = 20 mA, f = 0.8 GHz 9 12 dB

21e

VCE = 10 V, IC = 20 mA, f = 0.8 GHz 12 14 dB

UM

0.2±0.1

Publication date: February 2003 SJC00144BED

1

2SC3934

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

a

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

IC  V

hFE  I

25°C

−25°C

CE

Ta = 25°C

IB = 300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

)

C

VCE = 10 V

)

30

25

)

mA
(

20

C

15

10

Collector current I

5

0

012108264

)

)

Collector-emitter voltage VCE (V

240

200

FE

160

120

80

Forward current transfer ratio h

40

0

Ta = 75°C

0.1 1 10 100

Collector current IC (mA

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0 2.01.60.4 1.20.8

8

)

6

GHz
(

T

4

2

Transition frequency f

0

1 10 100

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

C

Ta = 25°C

= 10 V

V

CE

Collector current IC (mA

)

)

Cob  V

1.2

(pF)

ob

1.0

C

0.8

0.6

0.4

0.2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

8

6

)
dB

(

4

Noise figure NF

2

0

1 10 100

)

2

NF  I

C

Rg = 50 Ω
V

CE

f = 800 MHz

Collector current IC (mA

SJC00144BED

= 10 V

)

0.2

0

− 0.2

− 0.4

S11 , S

22

1

0.8

0.4

800 MHz
500 MHz

S

− 0.6

− 0.8

1000 MHz

11

−1

1.5

1000 MHz

−1.5

S

22

800 MHz
500 MHz

2

−2

VCE = 10 V

= 20 mA

I

C

E : Earth

3

4

5

10

101.5 54321.8.6.4.2

−10

−5

−4

−3