Panasonic 2SC3934 Datasheet

Transistor

2SC3934

Silicon NPN epitaxial planer type

For high-frequency wide-band low-noise amplification

Features

■

●

High transition frequency fT.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

15
12

2.5
50
30

150
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : 1U

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Symbol

I

CBO

I

EBO

h

FE

f

T

C

ob

| S
GUM
NF

21e

Conditions

VCB = 10V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 10mA
VCE = 10V, IC = 10mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz

2

|

VCE = 10V, IC = 20mA, f = 800MHz
VCE = 10V, IC = 20mA, f = 800MHz
VCE = 10V, IC = 5mA, f = 800MHz

min

40

9

12

typ

4.5

12
14

1.3

max

100

1

1.2

2.5

Unit

µA
µA

GHz

pF
dB
dB
dB

1

Transistor

2SC3934

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

25˚C

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Ta=75˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

30

25

)
mA

(

20

C

15

10

Collector current I

5

0

012108264

IB=300µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

VCE=10V

Collector current IC (mA

Ta=25˚C

250µA

200µA
150µA

100µA

50µA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

8

7

)
GHz

6

(

T

5

4

3

2

Transition frequency f

1

0

–1 –3 –10 –30 –100

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

–25˚C

fT — I

C

Ta=25˚C
V

CE

Collector current IC (mA

)

=10V

)

)
pF

(

Cob — V

1.2

1.0

ob

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

NF — I

C

8

7

)

6

dB

(

5

4

3

Noise figure NF

2

1

0

1 3 10 30 100

Collector current IC (mA

Rg=50Ω

=10V

V

CE

f=800MHz

S11, S

22

0.2

0

– 0.2

– 0.4

1

0.8

0.4

800MHz
500MHz

S

– 0.6

– 0.8

1000MHz

11

–1

1.5

1000MHz

–1.5

S

22
800MHz
500MHz

VCE=10V

=20mA

I

C

2

E: Earth

3

4

5

10

101.5 54321.8.6.4.2

–10

–5

–4

–3

–2

)