Panasonic 2SC3931G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
T
■ Package
• Code
SMini3-F2
• Marking Symbol: U
• Pin Name
1. Base
2. Emitter
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +150 °C
stg
30 V
20 V
3V
15 mA
150 mW
150 °C
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
Base-emitter voltage V
Forward current transfer ratio
Transition frequency f
Common-emitter reverse transfer C
capacitance
Power gain G
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank C D
h
FE
*
65 to 160 100 to 260
CBOIC
EBOIE
h
= 10 µA, IE = 030V
= 10 µA, IC = 03V
VCB = 6 V, IE = −1 mA 720 mV
BE
VCB = 6 V, IE = −1 mA 65 260
FE
VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz
T
VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
re
VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB
P
Publication date: April 2007 SJC00358AED
1
2SC3931G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IC V
30
Ta = 75°C
25°C
−25°C
25
)
mA
(
20
C
15
10
Collector current I
5
BE
a
VCE = 6 V
IC V
CE(sat)
CE
IB = 100 µA
I
Ta = 75°C
−25°C
Ta = 25°C
80 µA
60 µA
40 µA
20 µA
C
IC / IB = 10
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 18060 120
)
360
300
FE
240
180
120
Forward current transfer ratio h
60
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
Collector-emitter voltage VCE (V
V
100
)
V
(
CE(sat)
10
1
0.1
25°C
IC I
B
Base current IB (µA
hFE I
C
Ta = 75°C
25°C
−25°C
VCE = 6 V
Ta = 25°C
)
VCE = 6 V
0
0 2.01.60.4 1.20.8
Base-emitter voltage VBE (V
fT I
1 200
1 000
)
MHz
(
800
T
600
400
Transition frequency f
200
0
− 0.1 −1 −10 −100
E
Emitter current IE (mA
2
VCB = 6 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
E
)
VCB = 6 V
f = 2 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Zrb I
120
)
100
Ω
(
rb
80
60
40
20
Reverse transfer impedance Z
0
− 0.1 −1 −10
Emitter current IE (mA
0
0.1 1 10 100
CE
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Cre V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common-emitter reverse transfer capacitance C
0
0.1 1 10 100
Collector-emitter voltage VCE (V
SJC00358AED
Loading...