Panasonic 2SC3930G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
T
■ Package
• Code
SMini3-F2
• Marking Symbol: V
• Pin Name
1. Base
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +150 °C
stg
30 V
20 V
5V
30 mA
150 mW
150 °C
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Transition frequency f
Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
Reverse transfer capacitance C
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank B C
h
FE
*
70 to 140 110 to 220
I
VCB = 10 V, IE = 0 0.1 µA
CBO
h
VCB = 10 V, IE = −1 mA 70 220
FE
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz
T
VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω
rb
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF
re
Publication date: April 2007 SJC00357AED
1
2SC3930G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IB V
120
100
)
80
µA
(
B
60
40
Base current I
20
a
BE
)
VCE = 10 V
= 25°C
T
a
12
10
IB = 100 µA
)
mA
(
8
C
6
4
Collector current I
2
0
018612
Collector-emitter voltage VCE (V
IC V
60
50
IC V
)
mA
(
40
C
30
20
Collector current I
10
Ta = 75°C
25°C
−25°C
CE
BE
Ta = 25°C
80 µA
60 µA
40 µA
20 µA
VCE = 10 V
IC I
15.0
12.5
B
VCE = 10 V
= 25°C
T
a
)
mA
(
10.0
C
7.5
5.0
Collector current I
2.5
0
)
0 1008020 6040
100
)
V
(
CE(sat)
10
1
0.1
Base current IB (µA
V
I
CE(sat)
25°C
C
Ta = 75°C
−25°C
)
IC / IB = 10
0
0 1.00.80.2 0.60.4
Base-emitter voltage VBE (V
hFE I
240
200
FE
160
120
80
Forward current transfer ratio h
40
0
0.1 1 10 100
Ta = 75°C
25°C
−25°C
Collector current IC (mA
2
C
VCE = 10 V
0
0 2.01.60.4 1.20.8
)
Base-emitter voltage VBE (V
fT I
400
E
)
)
300
MHz
(
T
200
100
Transition frequency f
0
)
− 0.1 −1 −10 −100
Emitter current IE (mA
VCB = 10 V
f = 100 MHz
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Zrb I
60
)
50
Ω
(
rb
40
30
20
10
Reverse transfer impedance Z
0
− 0.1 −1 −10
E
VCB = 10 V
f = 2 MHz
T
a
= 25°C
Emitter current IE (mA
)
)
SJC00357AED
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