This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
T
■ Package
• Code
SMini3-F2
• Marking Symbol: V
• Pin Name
1. Base
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +150 °C
stg
30 V
20 V
5V
30 mA
150 mW
150 °C
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Transition frequency f
Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
Reverse transfer capacitance C
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank B C
h
FE
*
70 to 140 110 to 220
I
VCB = 10 V, IE = 0 0.1 µA
CBO
h
VCB = 10 V, IE = −1 mA 70 220
FE
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz
T
VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω
rb
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF
re
Publication date: April 2007 SJC00357AED
1
2SC3930G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IB V
120
100
)
80
µA
(
B
60
40
Base current I
20
a
BE
)
VCE = 10 V
= 25°C
T
a
12
10
IB = 100 µA
)
mA
(
8
C
6
4
Collector current I
2
0
018612
Collector-emitter voltage VCE (V
IC V
60
50
IC V
)
mA
(
40
C
30
20
Collector current I
10
Ta = 75°C
25°C
−25°C
CE
BE
Ta = 25°C
80 µA
60 µA
40 µA
20 µA
VCE = 10 V
IC I
15.0
12.5
B
VCE = 10 V
= 25°C
T
a
)
mA
(
10.0
C
7.5
5.0
Collector current I
2.5
0
)
0 1008020 6040
100
)
V
(
CE(sat)
10
1
0.1
Base current IB (µA
V
I
CE(sat)
25°C
C
Ta = 75°C
−25°C
)
IC / IB = 10
0
0 1.00.80.2 0.60.4
Base-emitter voltage VBE (V
hFE I
240
200
FE
160
120
80
Forward current transfer ratio h
40
0
0.1 1 10 100
Ta = 75°C
25°C
−25°C
Collector current IC (mA
2
C
VCE = 10 V
0
0 2.01.60.4 1.20.8
)
Base-emitter voltage VBE (V
fT I
400
E
)
)
300
MHz
(
T
200
100
Transition frequency f
0
)
− 0.1 −1 −10 −100
Emitter current IE (mA
VCB = 10 V
f = 100 MHz
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Zrb I
60
)
50
Ω
(
rb
40
30
20
10
Reverse transfer impedance Z
0
− 0.1 −1 −10
E
VCB = 10 V
f = 2 MHz
T
a
= 25°C
Emitter current IE (mA
)
)
SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
V
C
re
3.0
2.5
(pF)
re
C
2.0
1.5
1.0
0.5
Reverse transfer capacitance
(Common emitter)
0
0.1 1 10 100
IC = 3 mA
1 mA
CE
Collector-emitter voltage VCE (V
bie g
58
−7 mA
100
ie
Vie = gie + jb
VCE = 10 V
)
mS
(
24
20
−4 mA
16
−2 mA
ie
12
= −1 mA
E
I
8
Input susceptance b
4
f = 10.7 MHz
0
0403282416
Input conductance gie (mS
f = 10.7 MHz
= 25°C
T
a
)
GP I
bre g
re
E
VCE = 10 V
f = 100 MHz
= 25°C
T
a
re
f = 10.7 MHz
IE = −1 mA
)
58
100
)
24
20
)
16
dB
(
P
12
8
Power gain G
4
0
− 0.1 −1 −10 −100
)
ie
)
− 0.1
mS
(
re
− 0.2
− 0.3
− 0.4
− 0.5
Reverse transfer susceptance b
− 0.6
Emitter current IE (mA
0
yre = gre + jb
VCE = 10 V
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
Reverse transfer conductance gre (mS
12
10
)
dB
8
(
6
4
Noise figure NF
2
0
− 0.1 −1 −10
0
− 0.1 mA
)
−20
mS
(
fe
−40
−60
−80
−100
Forward transfer susceptance b
−120
0 1008020 6040
Forward transfer conductance gfe (mS
NF I
E
Emitter current IE (mA
bfe g
fe
f = 10.7 MHz
58
−1 mA
100
= −4 mA
E
100
100
58
yfe = gfe + jb
VCE = 10 V
−2 mA
I
VCB = 6 V
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
)
10.7
58
fe
)
boe g
1.2
1.0
)
mS
(
IE = −1 mA
0.8
oe
0.6
0.4
Output susceptance b
0.2
100
58
f = 10.7 MHz
0
0 0.50.40.1 0.30.2
Output conductance goe (mS
oe
yoe = goe + jb
VCE = 10 V
oe
)
SJC00357AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
2.00 ±0.20
+0.05
0.30
−0.02
0.425 ±0.050
3
12
(0.65)(0.65)
1.30
±0.10
(5°)
1.25 ±0.10
(0.89)
2.10 ±0.10
±0.10
0.90
(5°)
+0.05
0.13
−0.02
(0.49)
0 to 0.10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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