Panasonic 2SC3929A, 2SC3929 Datasheet

Transistor

2SC3929, 2SC3929A

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A

Features

■

●

Low noise voltage NV.

●

High foward current transfer ratio hFE.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SC3929
2SC3929A
2SC3929

2SC3929A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage

Noise voltage

Transition frequency

*1

h

Rank classification

FE1

Rank R S T

h

FE

Marking
Symbol

2SC3929 SR SS ST
2SC3929A TR TS TT

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

35
55
35
55

5

100

50
150
150

–55 ~ +150

Symbol

2SC3929
2SC3929A
2SC3929
2SC3929A

I

CBO

I

CEO

V

V

V
h
V
V

NV

f

T

FE

CBO

CEO

EBO

*

CE(sat)

BE

VCB = 10V, IE = 0
VCE = 10V, IB = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
IC = 100mA, IB = 10mA
VCE = 1V, IC = 100mA
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
VCB = 5V, IE = –2mA, f = 200MHz

180 ~ 360 260 ~ 520 360 ~ 700

Unit

V

V

V
mA
mA

mW

˚C
˚C

Conditions

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : S

min

(2SC3929)

(2SC3929A)

T

typ

35
55
35
55

5

180

0.7

80

max

100

1

700

0.6
1

150

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Unit

nA
µA

V

V

V

V
V

mV

MHz

1

Transistor 2SC3929, 2SC3929A

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

Ta=75˚C

25˚C

–25˚C

VCE=5V

CE

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012108264

)

)

Collector to emitter voltage VCE (V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

V

IB=350µA

CE(sat)

— I

25˚C

Ta=25˚C

300µA

250µA

200µA

150µA

100µA

50µA

C

IC/IB=10

Ta=75˚C

–25˚C

)

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

00.50.40.1 0.30.2

)

720

FE

600

480

360

240

120

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IC — I

B

VCE=5V
Ta=25˚C

Base current IB (mA

hFE — I

C

VCE=5V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

500

)

400

MHz

(

T

300

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

2

E

VCB=5V
Ta=25˚C

)
pF

(

20

16

ob

12

8

4

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

)

Collector to base voltage VCB (V

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

160

140

120

100

80

60

40

20

0

Collector to emitter voltage VCE (V

NV — V

Rg=100kΩ

1 3 10 30 100

22kΩ

4.7kΩ

CE

IC=1mA

=80dB

G

V

Function=FLAT

)