Panasonic 2SC3904 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC3904

Silicon NPN epitaxial planer type

For 2GHz band low-noise amplification

Features

■

●

High transition frequency fT.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15
10

2

65
200
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : 3S

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Symbol

I

CBO

I

EBO

h

FE

f

T

C

ob

| S

|

21e

GUM
NF

VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 0.8GHz
VCB = 10V, IE = 0, f = 1MHz

2

VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 7mA, f = 1.5GHz

Conditions

min

50

7.0

7

typ

120

8.5

0.6
9

10

2.2

max

1
1

300

1

3

Unit

µA
µA

GHz

pF
dB
dB
dB

1

Transistor 2SC3904

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

)

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

CE

30

25

)
mA

(

20

C

15

10

Collector current I

5

0

012108264

IB=250µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

200µA

150µA

100µA

50µA

VCE=8V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

1 3 10 30 100

IC — V

BE

VCE=8V

25˚C

Ta=75˚C –25˚C

fT — I

C

VCB=8V
f=1.5GHz
Ta=25˚C

Collector current IC (mA

)

)

)
pF

(

Cob — V

1.2

1.0

ob

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

12

)
dB

(

10

8

6

4

2

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=8V
f=1.5GHz
Ta=25˚C

NF — I

C

6

5

VCE=8V
f=1.5GHz
Ta=25˚C

)
dB

(

4

3

2

Noise figure NF

1

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

)