Panasonic 2SC3872 Datasheet

Po wer Transistors

2SC3872

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

500
500
400

7
20
10

5
70

3

150

–55 to +150

Unit

V
V
V
V
A
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 5A
IC = 5A, IB = 1A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 5A, IB1 = 1A, IB2 = –2A,
VCC = 150V

min

400

15

8

typ25max

100
100

1

1.5

0.7
2

0.3

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3872

PC—Ta IC—V

80

)

(1)

70

W

(

C

60

50

40

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3.0W)

(P

C

V

BE(sat)—IC

25˚C

100˚C

TC=–25˚C

Collector current IC (A

IC/IB=5

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

IB=1000mA

hFE—I

10000

3000

FE

1000

300

100

TC=100˚C

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

600mA

C

TC=25˚C

500mA

450mA
400mA

350mA

300mA

250mA
200mA

150mA
100mA

50mA

V

=5V

CE

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

t

f

0.1

t

on

Switching time t

0.03

0.01
082647153

Collector current IC (A

t

stg

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

Area of safe operation (ASO)

100

30

I

CP

I

)

C

10

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=0.5ms

DC

1ms

)