Panasonic 2SC3829 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC3829

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency fT.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15
10

2

80
200
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : 3M

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

h

FE

f

T

C

ob

| S

|

21e

GUM
NF

VCB = 10V, IE = 0
VEB = 2V, IC = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz

2

VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz

Conditions

min

15
10
50

5

10

typ

150

6

0.7

13.5
15

max

1
1

300

1.2

2

Unit

µA
µA

V
V

GHz

pF
dB
dB
dB

1

Transistor 2SC3829

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

)

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012108264

IB=200µA

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

180µA
160µA
140µA

120µA
100µA

80µA
60µA
40µA

20µA

VCE=8V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=8V

25˚C

Ta=75˚C

–25˚C

fT — I

C

VCE=8V
f=800MHz
Ta=25˚C

Collector current IC (mA

)

)

)
pF

(

Cob — V

2.4

2.0

ob

1.6

1.2

0.8

0.4

CB

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

24

)
dB

(

20

16

12

8

4

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=8V
f=800MHz
Ta=25˚C

NF — I

C

)
dB

(

12

10

8

6

4

VCE=8V

=50Ω)

(R

g

f=800MHz
Ta=25˚C

Noise figure NF

2

0

0.1 10 100 10000.3 3 300

)

Collector current IC (mA

)