Panasonic 2SC3795A, 2SC3795 Datasheet

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

Po wer Transistors

2SC3795, 2SC3795A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

Electrical Characteristics (T

■

Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

Turn-on time

Storage time

Fall time

*

V

CEO(sus)

2SC3795
2SC3795A
2SC3795
2SC3795A

TC=25°C
Ta=25°C

Parameter

T est circuit

2SC3795
2SC3795A

2SC3795
2SC3795A

2SC3795
2SC3795A

50/60Hz

mercury relay

120Ω

6V

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

Symbol

I

CBO

I

EBO

V

CEO(sus)

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

1Ω

CE(sat)

800
900
800
900
500

8

10

5
3

40

2

150

VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V

L 25mH

15V

Unit

V

V

V
V
A
A
A

W

˚C
˚C

Conditions

X

Y

G

TO–220 Full Pack Package(a)

min

typ8max

500

15

8

100
100
100

1

1.5

1

1.2
3
1

1.2

Unit: mm

1:Base
2:Collector
3:Emitter

Unit

µA

µA

V

V
V

MHz

µs

µs

µs

1

Po wer Transistors 2SC3795, 2SC3795A

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) T

=Ta

C

(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2)
(3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=5

25˚C

TC=–25˚C

100˚C

Collector current IC (A

)

CE

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

0108264

)

Collector to emitter voltage VCE (V

IB=1200mA

1000mA

800mA

hFE—I

1000

300

FE

100

30

10

3

1

Forward current transfer ratio h

0.3

0.1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

–25˚C

Collector current IC (A

600mA

400mA

C

300mA

200mA

150mA

TC=25˚C

100mA

50mA

20mA

VCE=5V

25˚C

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

25˚C

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)

µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

t

on

, tf — I

stg

t

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(I

B1

V

=200V

CC

=25˚C

T

C

t

f

Area of safe operation (ASO)

10

I

CP

I

C

3

)
A

(

1

C

0.3

0.1

0.03

Collector current I

0.01

0.003
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse
T

=25˚C

C

t=0.5ms

1ms

DC

2SC3795/2SC3795A

)