Panasonic 2SC3757 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3757

Silicon NPN epitaxial planar type

For high-speed switching

■ Features

• Low collector-emitter saturation voltage V

• Mini type package, allowing downsizing of the equipment and au-

tomatic insertion through the tape packing and the magazine
packing

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (E-B short) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CES

EBO

C

CP

C

j

stg

40 V

40 V

5V

100 mA

300 mA

200 mW

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: 2Y

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Turn-on time t

Turn-off time t

Storage time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

60 to 120 90 to 200

I

CBO

I

EBO

h

FE

CE(sat)IC

BE(sat)IC

T

ob

on

off

stg

VCB = 15 V, IE = 0 0.1 µA

VEB = 4 V, IC = 0 0.1 µA

VCE = 1 V, IC = 10 mA 60 200 

= 10 mA, IB = 1 mA 0.17 0.25 V

= 10 mA, IB = 1 mA 1.0 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz

VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF

Refer to the switching time measurement

17 ns

circuit 17 ns

10 ns

Publication date: February 2004 SJC00136CED

1

2SC3757

This product complies with the RoHS Directive (EU 2002/95/EC).

Switching time measurement circuit

ton , t

test circuit t

off

220 Ω

3.3 kΩ

V

= 10 V

IN

50 Ω

V

V

OUT

3.3 kΩ

VBB = −3 V

IN

10%

90%

t

on

IC  V

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 1.21.00.80.2 0.60.4

Collector-emitter voltage VCE (V

10%

90%

t

CE

0.1 µF

50 Ω

= 3 V

V

CC

off

Ta = 25°C

IB = 3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

V

OUT

PC  T

BE(sat)

 I

a

C

Ta = −25°C

75°C

)

)

25°C

test circuit

stg

V

= 10 V

IN

50 Ω

A

0.1 µF

500 Ω

500 Ω

V

BB

V

IN

V

OUT

t

(Waveform at A)

910 Ω

= 2 V

stg

10%

10%

0.1 µF

90 Ω

V

CC

1 kΩ

= 10 V

V

OUT

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

100

CE(sat)

)

V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

)

Collector current IC (mA

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

)

100

)

V

(

BE(sat)

10

1

0.1

Base-emitter saturation voltage V

0.01

V

1 10 100 1000

Collector current IC (mA

hFE  I

600

500

FE

400

300

200

Forward current transfer ratio h

100

0

0.1 1 10 100

Ta = 75°C

25°C

−25°C

Collector current IC (mA

C

VCE = 1 V

)

600

500

)

MHz
(

400

T

300

200

Transition frequency f

100

0

−1 −10 −100 −1000

2

fT  I

E

VCB = 10 V
T

a

Emitter current IE (mA

SJC00136CED

= 25°C

)

Cob  V

6

(pF)

ob

5

C

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

)