Panasonic 2SC3757 Datasheet

Transistors

2SC3757

Silicon NPN epitaxial planer type

For high speed switching

■ Features

• High-speed switching

• Low collector to emitter saturation voltage V

CE(sat)

• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

• Allowing pair use with 2SA1738

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CES

EBO

CP

C

C

j

stg

40 V
40 V

5V
300 mA
100 mA
200 mW
150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10°

1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package

Marking Symbol: 2Y

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

Unit: mm

+0.10

0.16

–0.06

+0.2

–0.3

2.8
5°

+0.3

–0.1

1.1

0.4±0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio

*

Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t

Note)*: Rank classification

Rank Q R

h

FE

60 to 120 90 to 200

Marking symbol 2YQ 2YR

CBO

EBO

h

CE(sat)IC

BE(sat)IC

off

stg

VCB = 15 V, IE = 0 0.1 µA
VEB = 4 V, IC = 0 0.1 µA
VCE = 1 V, IC = 10 mA 60 200

FE

= 10 mA, IB = 1 mA 0.17 0.25 V
= 10 mA, IB = 1 mA 1.0 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF

ob

on

Refere to the measurement circuit 17 ns

17 ns

10 ns

1

2SC3757 Transistors

PC  T

Switching time measurement circuit

t

, t

Test circuit t

on

off

0.1 µF
V

220 Ω

3.3 kΩ

= 10 V VIN = 10 V

V

IN

50 Ω

3.3 kΩ
V

DD

= −3 V

50 Ω

V

CC

OUT

= 3 V

50 Ω

Test circuit

stg

A

910 Ω

500 Ω

500 Ω

V

= 2 V

DD

0.1 µF

90 Ω

V

CC

1 kΩ

= 10 V

240

V

OUT

200

(mW)

C

160

120

a

10%

90%

t

on

IC  V

V

IN

V

OUT

CE

120

100

80

(mA)

C

60

40

V

IN

V

OUT

Collector current I

20

0

0 1.20.2 1.00.4 0.80.6

Collector to emitter voltage VCE (V)

10%

90%

t

off

Ta = 25°C

IB = 3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

0

V

IN

V

OUT

(Waveform at A)

100

(V)

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 0.3

10%

10%

t

stg

V

 I

CE(sat)

1 3 10 30 100

C

IC / IB = 10

25°C

Collector current IC (mA)

Ta = 75°C

−25°C

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

V

 I

100

BE(sat)

(V)

30

BE(sat)

10

V

3

1

0.3

0.1

0.03

Base to emitter saturation voltage

0.01
13

10 30 100 300 1 000

C

Collector current IC (mA)

Ta = −25°C

25°C

75°C

hFE  I

600

500

FE

400

300

200

Forward current transfer ratio h

100

0

0.1

Ta = 75°C

−25°C

0.3

1 3 10 30 100

Collector current IC (mA)

2

25°C

C

VCE = 1 V

fT  I

600

500

(MHz)

400

T

300

200

Transition frequency f

100

0

−1 −3 −10 −30 −100 −300 −1 000

E

VCB = 10 V
T

a

Emitter current IE (mA)

= 25°C

Cob  V

6

5

(pF)

ob

4

3

2

1

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V)

CB

IE = 0
f = 1 MHz
T

= 25°C

a