Panasonic 2SC3743 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC3743

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

Wide area of safe operation (ASO) with high breakdo wn v oltage

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CES

CEO

EBO

=25˚C)

C

Ratings

900
900
800

7
5
3
1

40

2

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.1A, f = 1MHz

IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V

min

800

6
6

typ4max

50
50

0.6

1.2

1.0

4.0

1.0

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3743

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

30

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03 0.1 0.3 1 3

(1) T

=Ta

C

(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2)
(3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=5

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

300

FE

100

25˚C

30

10

3

1

Forward current transfer ratio h

0.3

0.1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

–25˚C

Collector current IC (A

TC=25˚C

IB=600mA

400mA

300mA

200mA

100mA

50mA

20mA

C

VCE=5V

)

)
V

(

10

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

30

)
µs

(

10

f

,t

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01

V

CE(sat)—IC

3

1

TC=100˚C

0.01 310.10.03 0.3

Collector current IC (A

ton, t

, tf — I

stg

t

stg

3

1

t

f

02.01.60.4 1.20.8

Collector current IC (A

IC/IB=5

25˚C

–25˚C

C

Pulsed tw=1ms
Duty cycle=1%
I

=5

C/IB

=–IB2)

(2I

B1

=250V

V

CC

T

=25˚C

C

t

on

)

)

Area of safe operation (ASO)

100

30

)

10

A

(

C

Collector current I

I

3

I

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

CP

C

10ms

Non repetitive pulse

=25˚C

T

C

DC

2

t=1ms

)