Panasonic 2SC3704 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC3704

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency fT.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15
10

2

80
200
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Unit: mm

1:Bae JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol :2W

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Transition frequency
Collector output capacitance
Noise figure
Maximum unilateral power gain
Foward transfer gain

Symbol

I

CBO

I

EBO

h

FE1

h

FE2

f

T

C

ob

NF
GUM
| S

|

21e

VCB = 15V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 20mA
VCE = 1V, IC = 3mA
VCE = 8V, IC = 20mA, f = 0.8GHz
VCE = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 7mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz

2

VCE = 8V, IC = 20mA, f = 800MHz

Conditions

min

50
80

typ

150

6

0.7

1.0
14
13

max

1

1
300
280

1.2

1.7

Unit

µA
µA

GHz

pF
dB
dB
dB

1

Transistor

2SC3704

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

Ta=75˚C, 25˚C, –25˚C

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

C

IC/IB=10

)

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

012108264

IB=400µA

350µA

300µA

250µA

200µA

150µA

100µA

50µA

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

VCE=8V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=8V

25˚C

Ta=75˚C –25˚C

fT — I

C

VCE=8V
f=800MHz
Ta=25˚C

Collector current IC (mA

)

)

)
pF

(

Cob — V

2.4

2.0

ob

1.6

1.2

0.8

0.4

CB

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

24

)
dB

(

20

16

12

8

4

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=8V
f=800MHz
Ta=25˚C

NF — I

C

)
dB

(

6

5

4

3

2

VCE=8V
(R

=50W)

g

f=800MHz
Ta=25˚C

Noise figure NF

1

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

)