Panasonic 2SC3526H Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SC3526(H)

Silicon NPN epitaxial planer type

For display video output

Features

■

●

High transition frequency fT.

●

Small collector output capacitance Cob.

●

Wide current range.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

REB = 470Ω

Symbol

V

CBO

V

CER

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

*

Ratings

110
100

50

3.5
300
150

1.0
150

–55 ~ +150

Unit

V
V
V

V
mA
mA

W
˚C
˚C

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

*

Pulse measurement

Symbol

I

CEO

V

CBO

V

CER

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T1

f

T2

C

ob

Conditions

VCE = 35V, IB = 0
IC = 100µA, IE = 0
IC = 500µA, RBE = 470Ω
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 100mA
IC = 150mA, IB = 15mA

*

*

VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –110mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz

min

110
100

50

3.5
20

typ

300
350

3

max

10

0.5

Unit

µA

V
V
V
V

V
MHz
MHz

pF

1

Transistor

2SC3526(H)

PC — Ta IC — V

1.6

)

1.4

W

(

C

1.2

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

25˚C

Ta=75˚C

Collector current IC (mA

)

C

IC/IB=10

–25˚C

)

CE

240

200

)

mA

(

160

C

120

80

Collector current I

40

0

012108264

IB=5.0mA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

4.5mA

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=5V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

IC — V

BE

VCE=5V

Ta=75˚C

–25˚C

fT — I

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

25˚C

)

)

)
pF

(

Cob — V

6

5

ob

4

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)