Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Features
■
●
High transition frequency fT.
●
Small collector output capacitance Cob.
●
Wide current range.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
REB = 470Ω
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
Ratings
110
100
50
3.5
300
150
1.0
150
–55 ~ +150
Unit
V
V
V
V
mA
mA
W
˚C
˚C
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
Pulse measurement
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
VCE = 35V, IB = 0
IC = 100µA, IE = 0
IC = 500µA, RBE = 470Ω
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 100mA
IC = 150mA, IB = 15mA
*
*
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –110mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
min
110
100
50
3.5
20
typ
300
350
3
max
10
0.5
Unit
µA
V
V
V
V
V
MHz
MHz
pF
1
Transistor
2SC3526(H)
PC — Ta IC — V
1.6
)
1.4
W
(
C
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
1 10 100 10003 30 300
25˚C
Ta=75˚C
Collector current IC (mA
)
C
IC/IB=10
–25˚C
)
CE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012108264
IB=5.0mA
Collector to emitter voltage VCE (V
hFE — I
C
120
FE
100
80
60
40
20
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
VCE=5V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
01.00.80.2 0.60.4
)
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
–1 –10 –100 –1000–3 –30 –300
IC — V
BE
VCE=5V
Ta=75˚C
–25˚C
fT — I
E
VCB=10V
Ta=25˚C
Emitter current IE (mA
25˚C
)
)
)
pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)