Panasonic 2SC3507 Datasheet

Po wer Transistors

2SC3507

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

1000
1000

800

7

10

5
3

80

3

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

V

CEO(sus)

T est circuit

50/60Hz

mercury relay

120Ω

6V

Symbol

I

CBO

I

EBO

V

CEO(sus)

h

FE

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 1000V, IE = 0
VEB = 7V, IC = 0

*

IC = 0.5A, L = 50mH
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 5V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 250V

L 50mH

1Ω

15V

min

800

typ6max

50
50

Unit

µA
µA

V

6

1.5

1.5

V
V

MHz

1

2.5

0.5

X

Y

G

µs
µs
µs

1

Po wer Transistors 2SC3507

PC—Ta IC—V

100

)
W

(

(1)

80

C

60

40

20

(2)

Collector power dissipation P

(3)

0

0 15012510025 7550

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

25˚C

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(P

=3W)

C

V

BE(sat)—IC

TC=–25˚C

100˚C

Collector current IC (A

IC/IB=5

)

CE

10

8

)

A

(

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

300

FE

100

TC=100˚C

30

10

3

1

Forward current transfer ratio h

0.3

0.1

0.01 0.1 1 100.03 0.3 3

–25˚C

Collector current IC (A

C

TC=25˚C

IB=800mA

VCE=5V

25˚C

500mA
400mA

300mA
200mA

100mA
20mA

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

–25˚C

)

=25˚C

)

10

)

3

µs

(

f

,t

1

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

2

ton, t

, tf — I

stg

t

stg

t

on

t

f

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

=250V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

I

)

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

)