Panasonic 2SC3354 Datasheet

Transistor

2SC3354

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Transition frequency
Power gain

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

V

CBO

V

EBO

h

FE

V

BE

C

rb

C

re

*

f

T

PG

Ratings

Unit

30
20

3

50

300

mA

mW

150

–55 ~ +150

Conditions

IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –2mA
VCB = 10V, IE = –2mA
VCE = 6V, IC = 0, f = 1MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –15mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 100MHz

˚C
˚C

Unit: mm

4.0±0.2

3.0±0.215.6±0.5

marking

123

+0.2

0.1
–

0.45

0.7±0.1

2.0±0.2

V
V
V

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

min

30

3

25

600

1.271.27

typ

720

0.8

1200

17

2.54±0.15

1

max

250

1.5

1600

Unit

V
V

mV

pF
pF

MHz

dB

*

hFE Rank classification

Rank T S

fT(MHz) 600 ~ 1300 900 ~ 1600

1

Transistor

2SC3354

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

012108264

IB=300µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

Ta=75˚C

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

VCE=10V

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

250µA
200µA

150µA
100µA

50µA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1600

1400

)
MHz

1200

(

T

1000

800

600

400

Transition frequency f

200

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=10V

25˚C

Ta=75˚C –25˚C

fT — I

E

f=100MHz
Ta=25˚C

VCB=10V

6V

Emitter current IE (mA

)

)

)
pF

(

Cob — V

5

4

ob

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

120

)

Ω

(

100

rb

80

60

40

20

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

)

Emitter current IE (mA

Zrb — I

E

)

2.4

pF

f=2MHz
Ta=25˚C

VCE=6V

10V

)

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

Cre — V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)