Panasonic 2SC3315 Datasheet

Transistor

2SC3315

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

V

CBO

V

EBO

*

h

FE

V

BE

C

re

f

T

NF
PG

Ratings

–55 ~ +150

Unit

30
20

3

15
300
150

V
V
V

mA

mW

˚C
˚C

Conditions

IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

min

1.271.27

typ

0.1

+0.2

–

0.45

2.54±0.15

0.7±0.1

max

30

3

65

260

720

450

20

0.8
650

3.3
24

1.0

5.0

Unit: mm

2.0±0.2

Unit

V
V

mV

pF

MHz

dB
dB

*

hFE Rank classification

Rank C D

h

FE

65 ~ 160 100 ~ 260

1

Transistor 2SC3315

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Ta=75˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

012108264

IB=100µA

Collector to emitter voltage VCE (V

hFE — I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

80µA

60µA

40µA

20µA

VCE=6V

)

30

25

)
mA

(

20

C

15

10

Collector current I

5

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1600

1400

)
MHz

1200

(

T

1000

800

600

400

Transition frequency f

200

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=6V

25˚C

Ta=75˚C –25˚C

fT — I

E

VCE=10V

6V

Emitter current IE (mA

)

)

)
pF

(

Cob — V

2.5

2.0

ob

1.5

1.0

0.5

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

)

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)
dB

(

Power gain PG

)

PG — I

E

30

f=100MHz
R

=50Ω

g

Ta=25˚C

25

20

15

10

5

0

0.1 1 10 1000.3 3 30

VCE=10V

6V

Emitter current IE (mA

)