Panasonic 2SC3314 Datasheet

Transistor

2SC3314

Silicon NPN epitaxial planer type

For high-frequency amplification
Complementary to 2SA1323

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

–55 ~ +150

30
20

30
300
150

Unit: mm

4.0±0.2

3.0±0.215.6±0.5

marking

123

+0.2

0.1
–

0.45

0.7±0.1

2.0±0.2

Unit

V
V

5

V

mA

mW

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

1.271.27

2.54±0.15

˚C
˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance

*

hFE Rank classification

Symbol

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE

f

T

NF
C

re

Z

rb

Rank B C

h

FE

70 ~ 140 110 ~ 220

Conditions

IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 1mA
IC = 10mA, IB = 1mA
VCE = 10V, IC = 1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz

min

30
20

5

70

150

typ

0.1

0.7
300

2.8

max

220

4.0

1.5
50

Unit

V
V
V

V
V

MHz

dB
pF

Ω

1

Transistor

2SC3314

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

012108264

IB=100µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

80µA

60µA

40µA

20µA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

800

700

)
MHz

600

(

T

500

400

300

200

Transition frequency f

100

0
– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

fT — I

VCE=10V

–25˚C

E

Ta=25˚C

6V

Emitter current IE (mA

)

)

Zrb — I

E

60

)

Ω

(

50

rb

40

30

20

10

Reverse transfer impedance Z

0
– 0.1 – 0.3 –1 –3 –10

Emitter current IE (mA

2

VCB=10V
f=2MHz
Ta=25˚C

)

Cre — V

)

3.0

pF

(

re

2.5

2.0

1mA

1.5

1.0

0.5

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

IC=3mA

CE

f=10.7MHz
Ta=25˚C

)

PG — I

E

24

VCE=10V
f=100MHz
Ta=25˚C

20

)
dB

(

16

12

8

Power gain PG

4

0
– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

)