Panasonic 2SC3313 Datasheet

Transistor

2SC3313

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

Optimum for RF amplification of FM/AM radios.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Common emitter reverse transfer capacitance
Reverse transfer impedance
Transition frequency

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

V

CBO

V

CEO

V

EBO

*

h

FE

C

re

Z

rb

f

T

Ratings

–55 ~ +150

Unit

30
20

5

30
300
150

V
V
V

mA

mW

˚C
˚C

Conditions

IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCB = 10V, IE = –1mA, f = 200MHz

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

min

1.271.27

2.54±0.15

typ

+0.2

0.1
–

0.45

0.7±0.1

max

30
20

5

70

250

1.6
60

150

250

Unit: mm

2.0±0.2

Unit

V
V
V

pF

Ω

MHz

*

hFE Rank classification

Rank B C

h

FE

70 ~ 160 110 ~ 250

1

Transistor

2SC3313

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012108264

IB=100µA

Collector to emitter voltage VCE (V

hFE — I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

80µA
60µA

40µA

20µA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0
– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

–25˚C

fT — I

VCB=10V

E

Ta=25˚C

6V

Emitter current IE (mA

)

)

)
pF

(

Cob — V

5

4

ob

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

120

)

Ω

(

100

rb

80

60

40

20

Reverse transfer impedance Z

0

0.1 0.3 1 3 10

)

Emitter current IE (mA

Zrb — I

E

VCB=6V

f=2MHz
Ta=25˚C

10V

)

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

CE

f=10.7MHz
Ta=25˚C

IC=1mA, 3mA

)