Panasonic 2SC3313 Datasheet
Transistor
2SC3313
Silicon NPN epitaxial planer type
For high-frequency amplification
Features
■
●
Optimum for high-density mounting.
●
Allowing supply with the radial taping.
●
Optimum for RF amplification of FM/AM radios.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Common emitter reverse transfer capacitance
Reverse transfer impedance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
*
h
FE
C
re
Z
rb
f
T
Ratings
–55 ~ +150
Unit
30
20
5
30
300
150
V
V
V
mA
mW
˚C
˚C
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCB = 10V, IE = –1mA, f = 200MHz
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
min
1.271.27
2.54±0.15
typ
+0.2
0.1
–
0.45
0.7±0.1
max
30
20
5
70
250
1.6
60
150
250
Unit: mm
2.0±0.2
Unit
V
V
V
pF
Ω
MHz
*
hFE Rank classification
Rank B C
h
FE
70 ~ 160 110 ~ 250
1
Transistor
2SC3313
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
24
20
)
mA
(
16
C
12
8
Collector current I
4
0
012108264
IB=100µA
Collector to emitter voltage VCE (V
hFE — I
C
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
VCE=10V
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
80µA
60µA
40µA
20µA
)
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
VCE=10V
25˚C
Ta=75˚C
–25˚C
fT — I
VCB=10V
E
Ta=25˚C
6V
Emitter current IE (mA
)
)
)
pF
(
Cob — V
5
4
ob
3
2
1
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
120
)
Ω
(
100
rb
80
60
40
20
Reverse transfer impedance Z
0
0.1 0.3 1 3 10
)
Emitter current IE (mA
Zrb — I
E
VCB=6V
f=2MHz
Ta=25˚C
10V
)
Cre — V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
CE
f=10.7MHz
Ta=25˚C
IC=1mA, 3mA
)
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