Panasonic 2SC3312 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3312

Silicon NPN epitaxial planar type

For low-frequency and low-noise amplification

Complementary to 2SA1310

■ Features

0.75 max.

4.0±0.2

(0.8)(0.8)

2.0

±0.2

3.0

Unit: mm

±0.2

7.6

• Optimum for high-density mounting

• Allowing supply with the radial taping

• Low noise voltage NV

±0.5

15.6

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

55 V

7V

100 mA

200 mA

300 mW

150 °C

0.45

+0.20
–0.10

(2.5) (2.5)

231

+0.20

0.45

–0.10

0.7

±0.1

1: Emitter
2: Collector
3: Base

NS-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

CBOIC

CEOIC

EBOIE

Base-emitter voltage V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

I

CBO

I

CEO

h

CE(sat)IC

Transition frequency f

Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

180 to 360 260 to 520 360 to 700

= 10 µA, IE = 060V

= 2 mA, IB = 055V

= 10 µA, IC = 07V

VCE = 1 V, IC = 30 mA 1 V

BE

VCB = 20 V, IE = 0 0.1 µA

VCE = 20 V, IB = 01µA

VCE = 5 V, IC = 2 mA 180 700 

FE

= 100 mA, IB = 10 mA 1 V

VCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz

T

Rg = 100 kΩ, Function = FLAT

Publication date: March 2003 SJC00128BED

1

2SC3312

This product complies with the RoHS Directive (EU 2002/95/EC).

500

PC  T

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

a

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

hFE  I

Ta = 75°C

25°C

−25°C

CE

IB = 400 µA

C

Ta = 25°C

350 µA
330 µA

250 µA

200 µA

150 µA

100 µA

50 µA

VCE = 5 V

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

)

400

)

300

MHz
(

T

200

100

Transition frequency f

240

200

)

mA
(

160

C

120

80

Collector current I

40

0

)

012108264

Collector-emitter voltage VCE (V

1 000

FE

800

600

400

200

Forward current transfer ratio h

IC  V

BE

25°C

Ta = 75°C −25°C

VCE = 5 V

Base-emitter voltage VBE (V

fT  I

E

VCB = 5 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

5

(pF)

ob

C

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

C

= 80 dB

V

= 25°C

a

Rg = 100 kΩ

22 kΩ

4.1 kΩ

)

)

Collector current IC (mA

NV  I

240

200

)

mV

160

(

120

80

Noise voltage NV

40

0

0.01 0.1 1

)

Collector current IC (mA

VCE = 10 V
G
Function = FLAT
T

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

SJC00128BED