Panasonic 2SC3311A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3311A

Silicon NPN epitaxial planar type

For low-frequency amplification

Complementary to 2SA1309A

■ Features

0.75 max.

4.0±0.2

(0.8)(0.8)

2.0

±0.2

3.0

Unit: mm

±0.2

7.6

• Optimum for high-density mounting

• Allowing supply with the radial taping

±0.5

15.6

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

50 V

7V

100 mA

200 mA

300 mW

150 °C

0.45

+0.20
–0.10

(2.5) (2.5)

231

+0.20

0.45

–0.10

0.7

±0.1

1: Emitter
2: Collector
3: Base

NS-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No-rank

h

FE

160 to 260 210 to 340 290 to 460 160 to 460

Product of no-rank is not classified and have no indication for rank.

= 10 µA, IE = 060V

= 2 mA, IB = 050V

= 10 µA, IC = 07V

VCB = 10 V, IE = 0 0.1 µA

VCE = 10 V, IB = 01µA

VCE = 10 V, IC = 2 mA 160 460 

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF

ob

Publication date: March 2003 SJC00127BED

1

2SC3311A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

500

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

CE(sat)

a

C

IC / IB = 10

IC  V

hFE  I

CE

C

Ta = 25°C

IB = 160 µA

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

VCE = 10 V

Ta = 75°C

25°C

−25°C

200

160

)

mA
(

C

120

80

Collector current I

40

0

02.01.60.4 1.20.8

)

300

VCE = 10 V
f = 100 MHz
T

250

)

MHz
(

200

T

150

60

50

)

mA

(

40

C

30

20

Collector current I

10

0

012108264

)

Collector-emitter voltage VCE (V

600

500

FE

400

300

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

= 25°C

a

)

25°C

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Ta = 75°C

−25°C

Collector current IC (mA

Cob  V

10

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

200

Forward current transfer ratio h

100

0

0.1 1 10 100

C

= 25°C

a

)

)

Collector current IC (mA

NV  I

240

200

VCE = 10 V
Function = FLAT
T

100

Transition frequency f

50

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

)

mV

160

(

120

80

Noise voltage NV

40

0

10 100 1 000

)

Collector current IC (µA

Rg = 100 kΩ

20 kΩ

4.7 kΩ

)

2

SJC00127BED