Panasonic 2SC3187 Datasheet

Transistor

2SC3187

Silicon NPN triple diffusion planer type

For small TV video output

Features

■

●

High collector to emitter voltage V

●

Small collector output capacitance Cob.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V
V
V
I
I
P
T
T

CP

C

CBO

CEO

EBO

C

j

stg

Symbol

V

CBO

V

CEO

V

EBO

h

FE

V

BE

V

CE(sat)

f

T

C

ob

CEO

.

Ratings

300
300

7
200
100
750
150

–55 ~ +150

IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 50V, IC = 5mA
VCE = 10V, IC = 30mA
IC = 30mA, IB = 3mA
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz

Unit

V
V

V
mA
mA

mW

˚C
˚C

Conditions

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

typ

300
300

7

50

70

140

1.9

0.45

2.3±0.2

+0.2
–0.1

Unit: mm

1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

max

250

1.2

1.5

Unit

V
V
V

V
V

MHz

pF

1

Transistor

2SC3187

PC — Ta IC — V

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

CE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

060504010 3020

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

Forward current transfer ratio h

Ta=75˚C

200

160

120

80

40

0

1 10 100 10003 30 300

25˚C

–25˚C

VCE=50V

Collector current IC (mA

Ta=25˚C

1.6mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

IC — V

BE

VCE=5V

25˚C

Ta=75˚C –25˚C

fT — I

E

VCB=30V
Ta=25˚C

Emitter current IE (mA

)

)

)
pF

(

Cob — V

10

8

ob

6

4

2

CB

Collector output capacitance C

0

1 10 100 10003 30 300

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

Area of safe operation (ASO)

1000

300

)

100

mA

(

C

30

10

3

1

Collector current I

0.3

0.1
1 10 100 10003 30 300

I

CP

I

C

Collector to emitter voltage VCE (V

Ta=25˚C
Single pulse

t=1s

t=2.0ms

)