Panasonic 2SB1219A, 2SB1219 Datasheet
Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1820 and 2SD1820A
Unit: mm
+0.1
0.3
–0.0
(0.425)
0.15
+0.10
–0.05
■ Features
• Large collector current I
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to
base voltage
Collector to
emitter voltage
2SB1219 V
2SB1219A −60
2SB1219 V
2SB1219A −50
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
−30 V
−25 V
−5V
−1A
−500 mA
150 mW
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to
base voltage
Collector to
emitter voltage
2SB1219 V
2SB1219A −60
2SB1219 V
2SB1219A −50
Emitter to base voltage V
1
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
*
1
*
1
*
Transition frequency f
Collector output capacitance C
Note)*1: Pulse measurement
2: Rank classification
*
CBO
CBO
CEO
EBO
h
FE1
h
FE2
V
CE(sat)IC
V
BE(sat)IC
VCB = −20 V, IE = 0 − 0.1 µA
IC = −10 µA, IE = 0 −30 V
IC = −2 mA, IB = 0 −25 V
IE = −10 µA, IC = 0 −5V
2
*
VCE = −10 V, IC = −150 mA 85 340
VCE = −10 V, IC = −500 mA 40
= −300 mA, IB = −30 mA − 0.35 − 0.6 V
= −300 mA, IB = −30 mA −1.1 −1.5 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
T
VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
ob
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10°
1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package
Marking Symbol
• 2SB1219 : C
• 2SB1219A: D
±0.10
1.25
+0.2
±0.1
0.9
0.9
0 to 0.1
±0.1
2.1
5°
±0.1
0.2
–0.1
Rank Q R S No-rank
Marking
symbol
h
FE1
2SB1219 CQ CR CS C
2SB1219A DQ DR DS D
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for
rank.
1
2SB1219, 2SB1219A Transistors
PC T
240
)
200
mW
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
)
−100
V
(
−30
CE(sat)
−10
−3
−1
− 0.3
− 0.1
− 0.03
− 0.01
Collector to emitter saturation voltage V
− 0.01 − 0.03
CE(sat)
Ta = 75°C
25°C
−25°C
− 0.1 − 0.3 −1 −3 −10
Collector current IC (A
a
C
IC / IB = 10
IC V
BE(sat)
Ta = −25°C
75°C
−9 mA
−8 mA
−7 mA
I
CE
–6 mA
−5 mA
Ta = 25°C
−4 mA
−3 mA
−2 mA
−1 mA
C
IC / IB = 10
)
−800
−700
IB = −10 mA
)
−600
mA
(
C
−500
−400
−300
−200
Collector current I
−100
0
)
0 −20−4 −8 −16−12
Collector to emitter voltage VCE (V
V
−100
)
V
(
−30
BE(sat)
−10
−3
25°C
−1
− 0.3
− 0.1
− 0.03
Base to emitter saturation voltage V
− 0.01
− 0.01 − 0.03
)
− 0.1 − 0.3 −1 −3 −10
Collector current IC (A
−800
−700
)
−600
mA
(
C
−500
−400
−300
−200
Collector current I
−100
0
0 −10−8−6−4−2
)
600
500
FE
400
300
Ta = 75°C
200
−25°C
Forward current transfer ratio h
100
0
− 0.01 − 0.03
IC I
B
Base current IB (mA
hFE I
25°C
− 0.1 − 0.3 −1 −3 −10
Collector current IC (A
VCE = −10 V
= 25°C
T
a
)
C
VCE = −10 V
)
fT I
240
200
)
MHz
(
160
T
120
80
Transition frequency f
40
0
1 3 10 30 100220550
E
VCB = −10 V
T
a
= 25°C
Emitter current IE (mA
2
Cob V
24
)
pF
20
(
ob
16
12
8
4
Collector output capacitance C
0
−3 −10 −30 −100−50−20−5−2
)
−1
Collector to base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
−120
)
V
(
−100
CER
−80
−60
−40
−20
Collector to emitter voltage V
0
)
V
R
CER
1310 30 100 300 1 000
BE
IC = −2 mA
= 25°C
T
a
2SB1219A
2SB1219
Base to emitter resistance RBE (kΩ
)
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