Panasonic 2SB1219A, 2SB1219 Datasheet

Transistors

2SB1219, 2SB1219A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD1820 and 2SD1820A

Unit: mm

+0.1

0.3

–0.0

(0.425)

0.15

+0.10
–0.05

■ Features

• Large collector current I

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to
base voltage

Collector to
emitter voltage

2SB1219 V
2SB1219A −60
2SB1219 V

2SB1219A −50
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

EBO

CP

C

C

j

stg

−30 V

−25 V

−5V

−1A

−500 mA

150 mW
150 °C

−55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Collector to
base voltage

Collector to
emitter voltage

2SB1219 V
2SB1219A −60
2SB1219 V
2SB1219A −50

Emitter to base voltage V

1

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage

*

1

*

1

*

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

VCB = −20 V, IE = 0 − 0.1 µA
IC = −10 µA, IE = 0 −30 V

IC = −2 mA, IB = 0 −25 V

IE = −10 µA, IC = 0 −5V

2

*

VCE = −10 V, IC = −150 mA 85 340
VCE = −10 V, IC = −500 mA 40

= −300 mA, IB = −30 mA − 0.35 − 0.6 V
= −300 mA, IB = −30 mA −1.1 −1.5 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz

T

VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF

ob

132

(0.65)

(0.65)

1.3

±0.1

2.0

±0.2

10°

1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package

Marking Symbol

• 2SB1219 : C

• 2SB1219A: D

±0.10

1.25

+0.2

±0.1

0.9

0.9

0 to 0.1

±0.1

2.1

5°

±0.1

0.2

–0.1

Rank Q R S No-rank

Marking
symbol

h

FE1

2SB1219 CQ CR CS C
2SB1219A DQ DR DS D

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classi­fied and have no indication for
rank.

1

2SB1219, 2SB1219A Transistors

PC  T

240

)

200

mW

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)

−100

V

(

−30

CE(sat)

−10

−3

−1

− 0.3

− 0.1

− 0.03

− 0.01

Collector to emitter saturation voltage V

− 0.01 − 0.03

CE(sat)

Ta = 75°C

25°C

−25°C

− 0.1 − 0.3 −1 −3 −10

Collector current IC (A

a

C

IC / IB = 10

IC  V

BE(sat)

Ta = −25°C

75°C

−9 mA

−8 mA

−7 mA

 I

CE

–6 mA

−5 mA

Ta = 25°C

−4 mA

−3 mA

−2 mA

−1 mA

C

IC / IB = 10

)

−800

−700

IB = −10 mA

)

−600

mA

(

C

−500

−400

−300

−200

Collector current I

−100

0

)

0 −20−4 −8 −16−12

Collector to emitter voltage VCE (V

V

−100

)
V

(

−30

BE(sat)

−10

−3
25°C

−1

− 0.3

− 0.1

− 0.03

Base to emitter saturation voltage V

− 0.01

− 0.01 − 0.03

)

− 0.1 − 0.3 −1 −3 −10

Collector current IC (A

−800

−700

)

−600

mA

(

C

−500

−400

−300

−200

Collector current I

−100

0

0 −10−8−6−4−2

)

600

500

FE

400

300

Ta = 75°C

200

−25°C

Forward current transfer ratio h

100

0

− 0.01 − 0.03

IC  I

B

Base current IB (mA

hFE  I

25°C

− 0.1 − 0.3 −1 −3 −10

Collector current IC (A

VCE = −10 V

= 25°C

T

a

)

C

VCE = −10 V

)

fT  I

240

200

)

MHz

(

160

T

120

80

Transition frequency f

40

0

1 3 10 30 100220550

E

VCB = −10 V
T

a

= 25°C

Emitter current IE (mA

2

Cob  V

24

)
pF

20

(

ob

16

12

8

4

Collector output capacitance C

0

−3 −10 −30 −100−50−20−5−2

)

−1

Collector to base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

−120

)

V

(

−100

CER

−80

−60

−40

−20

Collector to emitter voltage V

0

)

V

 R

CER

1310 30 100 300 1 000

BE

IC = −2 mA

= 25°C

T

a

2SB1219A

2SB1219

Base to emitter resistance RBE (kΩ

)