Panasonic 2SB1207 Datasheet
Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Optimum for high-density mounting.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
–15
–10
–7
–1
– 0.5
300
150
–55 ~ +150
Unit: mm
4.0±0.2
+0.2
0.1
–
0.45
3.0±0.215.6±0.5
0.7±0.1
2.0±0.2
.
marking
Unit
123
V
V
V
1.271.27
2.54±0.15
A
A
mW
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
˚C
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
130 ~ 220 180 ~ 350
Conditions
VCB = –10V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
*2
*2
IC = –0.4A, IB = –8mA
IC = –0.4A, IB = –8mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–15
–10
–7
130
60
typ
– 0.16
– 0.8
130
22
*2
Pulse measurement
max
–100
350
– 0.3
–1.2
Unit
nA
V
V
V
V
V
MHz
pF
1
Transistor 2SB1207
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
C
IC/IB=50
)
CE
–1.2
IB=–10mA
)
A
(
–1.0
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
Ta=75˚C
25˚C
300
–25˚C
200
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
)
V
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
)
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT — I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
Emitter current IE (mA
— I
Ta=–25˚C
75˚C
E
C
VCB=–10V
Ta=25˚C
IC/IB=50
)
)
Cob — V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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