Panasonic 2SB1207 Datasheet

Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
Features
Optimum for high-density mounting.
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
–15 –10
–7 –1
– 0.5
300 150
–55 ~ +150
Unit: mm
4.0±0.2
+0.2
0.1 –
0.45
3.0±0.215.6±0.5
0.7±0.1
2.0±0.2
.
marking
Unit
123
V V V
1.271.27
2.54±0.15
A A
mW
1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package
˚C ˚C
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
130 ~ 220 180 ~ 350
Conditions
VCB = –10V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0
*1
VCE = –2V, IC = –0.5A VCE = –2V, IC = –1A
*2
*2
IC = –0.4A, IB = –8mA IC = –0.4A, IB = –8mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
min
–15 –10
–7
130
60
typ
– 0.16
– 0.8
130
22
*2
Pulse measurement
max
–100
350
– 0.3 –1.2
Unit
nA
V V V
V V
MHz
pF
1
Transistor 2SB1207
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
C
IC/IB=50
)
CE
–1.2
IB=–10mA
) A
(
–1.0
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
Ta=75˚C
25˚C
300
–25˚C
200
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–9mA –8mA –7mA
–6mA –5mA –4mA –3mA
–2mA
–1mA
)
V
BE(sat)
–100
) V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
)
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT — I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
Emitter current IE (mA
— I
Ta=–25˚C
75˚C
E
C
VCB=–10V Ta=25˚C
IC/IB=50
)
)
Cob — V
80
) pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0 f=1MHz Ta=25˚C
)
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