Panasonic 2SB1155 Datasheet
Po wer Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1706
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Large collector current I
●
Full-pack package which can be installed to the heat sink with
C
one screw
CE(sat)
Unit: mm
15.0±0.3
11.0±0.2
FE
φ3.2±0.1
21.0±0.516.2±0.5
5.0±0.2
3.2
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
CBO
CEO
EBO
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
–130
–80
–7
–25
–15
80
3
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –8A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –7A, IB1 = – 0.7A, IB2 = 0.7A,
VCC = –50V
3.5 0.715.0±0.2
12.5
Solder Dip
10.9±0.5
min
–80
45
90
30
2.0±0.2
1.1±0.1
5.45±0.3
321
TOP–3 Full Pack Package(a)
typ
max
–10
–50
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
Unit
µA
µA
260
– 0.5
–1.5
–1.5
–2.5
25
MHz
0.5
1.3
0.2
V
V
V
V
V
µs
µs
µs
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
1
Po wer Transistors 2SB1155
PC—Ta IC—V
120
)
W
(
100
C
80
60
40
20
Collector power dissipation P
0
0 15012510025 7550
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –30–10–1– 0.3 –3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3W)
(P
(1)
(2)
(3)
C
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
TC=100˚C
25˚C
Collector current IC (A
–25˚C
)
)
CE
–20
IB=–300mA
–16
)
A
(
C
–12
–8
Collector current I
–4
0
0 –12–10–8–2 –6–4
–200mA
TC=25˚C
–140mA
–100mA
–80mA
–60mA
–40mA
–20mA
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
TC=–25˚C
–1
100˚C
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=10
)
V
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –30–10–1– 0.3 –3
)
CE(sat)—IC
Collector current IC (A
hFE—I
1000
FE
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
Forward current transfer ratio h
1
– 0.1 –30–10–1– 0.3 –3
Collector current IC (A
C
(1) IC/IB=10
=20
(2) I
C/IB
T
=25˚C
C
(2)
(1)
)
VCE=2V
)
1000
300
)
MHz
100
(
T
30
10
3
1
Transition frequency f
0.3
0.1
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
2
fT—I
C
– 0.3 –3
VCE=–10V
f=10MHz
=25˚C
T
C
)
ton, t
10
)
3
µs
(
f
,t
stg
,t
on
Switching time t
t
stg
1
0.3
0.1
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
t
on
t
f
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
)
(–I
B1=IB2
=–50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
–100
I
–30
CP
)
–10
I
A
C
(
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
DC
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
)
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