Panasonic 2SB1148, 2SB1148A Datasheet
Po wer Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1148
2SB1148A
2SB1148
2SB1148A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
Symbol
2SB1148
2SB1148A
2SB1148
2SB1148A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
CE(sat)
=25˚C)
C
Ratings
–40
–50
–20
–40
–7
–20
–10
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –20V
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
min
–20
–40
45
90
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
1.0 max.
typ
100
400
0.1
0.5
0.1
Unit: mm
3.5±0.2
0.85±0.1
0.4±0.1
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.01.0
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
max
–50
–50
–50
Unit
µA
µA
V
260
– 0.6
–1.5
V
V
MHz
pF
µs
µs
µs
2.5±0.2
2.5±0.2
1
Po wer Transistors 2SB1148, 2SB1148A
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
(1) TC=Ta
(2) Without heat sink
(2)
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
(P
(1)
=1.3W)
C
IC/IB=30
)
CE
)
–12
–10
)
A
(
–8
C
–6
–4
IB=–100mA
–80mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
25˚C
–25˚C
TC=25˚C
–60mA
–50mA
–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
C
VCE=–2V
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
TC=100˚C
25˚C
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=30
–25˚C
)
VCE=–10V
f=10MHz
T
=25˚C
C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
ton, t
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
t
on
t
f
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
t
stg
Area of safe operation (ASO)
–100
–30
I
)
)
CP
I
)
C
–10
A
(
C
–3
300ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
2SB1148A
2SB1148
)
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