Panasonic 2SB1073 Datasheet
Transistor
2SB1073
Silicon PNP epitaxial planer type
For low-frequency amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Large peak collector current ICP.
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–30
–20
–7
–7
–4
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : I
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Rank Q R
h
FE
120 ~ 205 180 ~ 315
Marking Symbol IQ IR
Conditions
VCB = –30V, IE = 0
VEB = –7V, IC = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –2A
IC = –3A, IB = –0.1A
*2
*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–30
–20
–7
120
typ
– 0.6
120
40
*2
Pulse measurement
max
–100
–100
315
–1
Unit
nA
nA
V
V
V
V
MHz
pF
1
Transistor
2SB1073
PC — Ta IC — V
1.6
)
1.4
W
(
C
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=30
Ta=25˚C
Ta=75˚C
– 0.3 –3
Collector current IC (A
)
)
CE
1200
1000
)
mA
(
800
C
600
400
Collector current I
200
0
0 –12–10–8–2 –6–4
=–200µA
I
B
–180µA
–160µA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
0
– 0.01
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–140µA
–120µA
–100µA
–80µA
–60µA
–40µA
–20µA
)
IC — V
–12
–10
)
A
(
–8
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
Cob — V
120
)
pF
(
100
ob
80
60
40
20
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Ta=75˚C
BE
CB
25˚C
VCE=–2V
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
)
2
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