Panasonic 2SB1036 Datasheet

Transistor

2SB1036

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–120
–120

–5
–50
–20
300
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

1.271.27

0.1

+0.2

–

0.45

2.54±0.15

0.7±0.1

Unit: mm

2.0±0.2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE*

V

CE(sat)

f

T

NV

Rank R S

h

FE

180 ~ 360 260 ~ 520

Conditions

VCB = –50V, IE = 0
VCE = –50V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –20mA, IB = –2mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –40V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT

min

–120
–120

–5

180

typ

200

max

–100

–1

520

– 0.6

150

Unit

nA
µA

V
V
V

V

MHz

mV

1

Transistor

2SB1036

PC — Ta IC — V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

Ta=75˚C

Collector current IC (mA

)

C

IC/IB=10

–25˚C

)

CE

–24

–20

)
A

(

–16

C

–12

–8

IB=–50µA

Collector current I

–4

0

0 –12–10–8–2 –6–4

Collector to emitter voltage VCE (V

hFE — I

C

1000

900

FE

800

700

600

500

400

300

200

Forward current transfer ratio h

100

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Ta=75˚C

25˚C
–25˚C

VCE=–5V

Collector current IC (mA

Ta=25˚C

–45µA
–40µA
–35µA

–30µA
–25µA

–20µA
–15µA
–10µA

–5µA

)

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

160

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=–5V

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=–5V
Ta=25˚C

Emitter current IE (mA

)

)

Cob — V

10

)

9

pF

(

8

ob

7

6

5

4

3

2

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

NV — I

C

120

100

80

60

40

20

0

– 0.01 – 0.03 – 0.1 – 0.3 –1

VCE=–10V
G

=80dB

V

Function=FLAT

Rg=100kΩ

22kΩ

4.7kΩ

Collector current IC (mA

)