Panasonic 2SB0976 Datasheet

Transistor

2SB976

Silicon PNP epitaxial planer type

For low-frequency output amplification
For DC-DC converter
For stroboscope

Features

■

●

Low collector to emitter saturation voltage V

●

Large collector current IC.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

0.75

–55 ~ +150

–27
–18

–7
–8
–5

150

CE(sat)

Unit: mm

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

.

Unit

V
V
V
A

A
W
˚C
˚C

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

+0.2

0.45

–0.1

1:Emitter

2.3±0.2

2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Symbol

I

CBO

I

EBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank Q R

h

FE

125 ~ 205 180 ~ 625

Conditions

VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0

*1

VCE = –2V, IC = –2A
IC = –3A, IB = –0.1A

*2

*2

VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz

min

–18

–7

125

typ

– 0.4

120

60

*2

Pulse measurement

max

–100

–1

625

–1

Unit

nA
µA

V
V

V

MHz

pF

1

Transistor

2SB976

PC — Ta IC — V

1.0

)

0.9

W

(

0.8

C

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

– 0.03

Ta=75˚C

25˚C

– 0.1 –10 –100

– 0.3 –30

Collector current IC (A

)

C

IC/IB=30

–25˚C

)

CE

–6

IB=–40mA

–5

)
A

(

–4

C

–3

–2

–35mA

Collector current I

–1

0

0 –12–10–8–2 –6–4

Collector to emitter voltage VCE (V

hFE — I

C

1000

900

FE

800

700

600

500

400

300

200

Forward current transfer ratio h

100

0

– 0.01

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10

– 0.03

VCE=–2V

– 0.3 –3

Collector current IC (A

Ta=25˚C

–30mA
–25mA

–20mA

–15mA

–10mA

–5mA

–1mA

)

–12

–10

)
A

(

–8

C

–6

–4

Collector current I

–2

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

1 3 10 30 100

IC —V

BE

VCE=–2V

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=–6V
Ta=25˚C

Emitter current IE (mA

)

)

Cob — V

200

)

180

pF

(

160

ob

140

120

100

80

60

40

20

Collector output capacitance C

0

–1 –3 –10 –30 –100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)