Panasonic 2SB0968 Datasheet

6.5±0.1

5.3±0.1

4.35±0.1

4.6±0.1

2.3±0.1

0.75±0.1

123

0.93±0.1

2.5±0.1

0.8max

1.0±0.2

7.3±0.1

1.8±0.1

2.3±0.1

0.5±0.1

0.5±0.1

0.1±0.05

1.0±0.1

6.5±0.2

2.3

5.35

4.35

13.3±0.3

2.3±0.1

5.5±0.26.0

1.8

0.75

0.6

3

2.3

21

0.5±0.1

Po wer Transistors

2SB968

Silicon PNP epitaxial planar type

For low-frequency output amplification
Complementary to 2SD1295

Features

■

●

Possible to solder the radiation fin directly to printed cicuit board

●

High collector to emitter V

●

Large collector power dissipation P

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*

hFE Rank classification

Rank P Q R

h

FE

50 to 100 80 to 160 120 to 220

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CBO

I

CEO

I

EBO

V

CBO

V

CEO

*

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

C

–55 to +150

=25˚C)

Ratings

–50
–40

–5
–3

–1.5

20

150

Unit

V
V
V
A

A
W
˚C
˚C

Conditions

VCB = –20V, IE = 0
VCE = –10V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –2mA, IB = 0
VCE = –5V, IC = –1A
IC = –1.5A, IB = – 0.15A
IC = –2A, IB = – 0.2A
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz

min

–50
–40

50

1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)

typ

150

45

Unit: mm

1:Base
2:Collector
3:Emitter
U Type Package

Unit: mm

max

–100

–10

Unit

–1

µA
µA
µA

220

–1

–1.5

MHz

pF

V
V

V
V

1

Po wer Transistors 2SB968

PC—Ta IC—V

32

)

28

W

(

C

24

20

16

12

8

4

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

BE(sat)—IC

)
V

(

–10

BE(sat)

–3

–1

– 0.3

– 0.1

TC=–25˚C

100˚C

25˚C

TC=Ta

IC/IB=10

CE

–4.0

–3.5

)

–3.0

A

(

C

–2.5

–2.0

–1.5

–1.0

Collector current I

– 0.5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

30

10

TC=100˚C

TC=25˚C

IB=–40mA

–35mA

–30mA
–25mA

–20mA

–15mA

–10mA

–5mA

C

VCE=–5V

25˚C

–25˚C

)
V

(

–10

CE(sat)

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01 –3–1– 0.1– 0.03 – 0.3

)

240

)

200

MHz

(

T

160

120

80

V

CE(sat)—IC

TC=100˚C

25˚C

–25˚C

Collector current IC (A

fT—I

E

VCB=–5V
f=200MHz
T

C

IC/IB=10

)

=25˚C

– 0.03

Base to emitter saturation voltage V

– 0.01

– 0.01 –3–1– 0.1– 0.03 – 0.3

CB

)

IE=0
f=1MHz

=25˚C

T

C

Collector current IC (A

150

)
pF

(

120

ob

90

60

30

Cob—V

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

3

Forward current transfer ratio h

1

– 0.01 –3–1– 0.1– 0.03 – 0.3

Collector current IC (A

–120

)
V

(

–100

CER

–80

–60

–40

–20

Collector to emitter voltage V

0

0.001 0.01 0.1 1 10

)

Base to emitter resistance RBE (kΩ

V

CER—RBE

)

TC=25˚C

40

Transition frequency f

0

10 100 1000 1000030 300 3000

1000

300

)

100

)
Ta

(

30

Ta=25˚C

(

CEO

I

CEO

10

I

3

1

0 1201008020 6040

)

Ambient temperature Ta (˚C

Emitter current IE (mA

I

—Ta

CEO

VCE=–12V

)

)

2