Panasonic 2SB0967 Datasheet
Po wer Transistors
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
123
0.93±0.1
2.5±0.1
0.8max
1.0±0.2
7.3±0.1
1.8±0.1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
6.5±0.2
2.3
5.35
4.35
13.3±0.3
2.3±0.1
5.5±0.26.0
1.8
0.75
0.6
3
2.3
21
0.5±0.1
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
Features
■
●
Possible to solder the radiation fin directly to printed cicuit board
●
Low collector to emitter saturation voltage V
●
Large collector current I
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
Electrical Characteristics (T
■
C
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
–55 to +150
CE(sat)
Ratings
–27
–18
–7
–8
–5
20
150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
hFE Rank classification
Rank P Q R
h
FE
Parameter
90 to 135 125 to 205 180 to 625
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*
VCE = –2V, IC = –2A
IC = –3A, IB = – 0.1A
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–18
–7
90
typ
120
max
–100
–1
625
–1
85
Unit
nA
µA
V
V
V
MHz
pF
1
Po wer Transistors 2SB967
PC—Ta IC—V
32
)
28
W
(
C
24
20
16
12
8
4
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
TC=Ta
IC/IB=30
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=–40mA
–35mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
TC=25˚C
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
–1mA
)
C
VCE=–2V
–12
–10
)
A
(
–8
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
240
)
200
MHz
(
T
160
IC—V
TC=100˚C
fT—I
BE
25˚C
E
VCE=–2V
–25˚C
VCB=–6V
f=200MHz
T
=25˚C
C
)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
200
)
pF
(
160
ob
120
80
40
TC=100˚C
–25˚C
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Cob—V
CB
)
IE=0
f=1MHz
=25˚C
T
C
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
– 0.03
TC=100˚C
– 0.1 –1 –10
– 0.3 –3
25˚C
–25˚C
Collector current IC (A
120
80
40
Transition frequency f
0
1 3 10 30 100
)
Emitter current IE (mA
)
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
)
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