Panasonic 2SB0956 Datasheet
Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
Features
■
●
Large collector power dissipation PC.
●
Low collector to emitter saturation voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–20
–20
–5
–2
–1
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : H
Unit: mm
1.5±0.1
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
130 ~ 210 180 ~ 280
Marking Symbol HR HS
Conditions
VCB = –10V, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –500mA
VCE = –2V, IC = –1.5A
IC = –1A, IB = –50mA
*2
*2
*2
IC = –500mA, IB = –50mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–20
–5
130
50
typ
max
–1
280
– 0.5
–1.2
200
40
*2
Pulse measurement
Unit
µA
V
V
V
V
MHz
pF
1
Transistor
2SB956
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
Base to emitter saturation voltage V
– 0.001
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
Ta=–25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=10
25˚C
75˚C
– 0.3 –3
Collector current IC (A
)
V
CE
)
–1.2
–1.0
)
A
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
25˚C
–25˚C
0
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
– 0.3 –3
C
Ta=25˚C
IB=–5.0mA
–4.5mA
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
VCE=–2V
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
Collector current IC (A
500
450
)
400
MHz
(
350
T
300
250
200
150
100
Transition frequency f
50
0
10 30 100 300 1000
Emitter current IE (mA
— I
CE(sat)
– 0.1 –1 –10
C
Ta=75˚C
25˚C
–25˚C
– 0.3 –3
IC/IB=20
)
fT — I
E
VCB=–6V
Ta=25˚C
)
)
pF
(
Cob — V
120
100
ob
80
60
40
20
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
10
3
I
CP
)
1
A
(
I
C
C
– 0.3
– 0.1
– 0.03
– 0.01
Collector current I
– 0.003
– 0.001
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
t=1s
Single pulse
Ta=25˚C
t=10ms
)
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