Panasonic 2SB0953A, 2SB0953 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1444 and 2SD1444A
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB953
2SB953A
2SB953
2SB953A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
2SB953
2SB953A
Emitter cutoff current
Collector to emitter
voltage
2SB953
2SB953A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
Rank classification
Rank Q P
h
FE2
90 to 180 130 to 260
FE2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–12
–7
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
=25˚C)
Conditions
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –5A, IB = – 0.16A
IC = –5A, IB = – 0.16A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
Note: Ordering can be made by the common rank (PQ rank h
rank classification.
TO–220 Full Pack Package(a)
min
typ
–20
–40
45
90
150
140
0.1
0.5
0.1
1:Base
2:Collector
3:Emitter
max
–50
–50
–50
260
– 0.6
–1.5
= 90 to 260) in the
FE2
Unit
µA
µA
V
V
V
MHz
pF
µs
µs
µs
1
Po wer Transistors 2SB953, 2SB953A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=30
TC=–25˚C
100˚C
25˚C
Collector current IC (A
)
CE
)
–6
–5
)
A
(
–4
C
–3
–2
IB=–60mA
Collector current I
–1
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
TC=100˚C
300
100
–25˚C
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
25˚C
–50mA
C
TC=25˚C
–45mA
–40mA
–35mA
VCE=–2V
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
3
1
– 0.01
– 0.1 – 1 – 10
– 0.03
– 0.3 – 3
Collector current IC (A
IC/IB=30
TC=100˚C
25˚C
–25˚C
VCE=–10V
f=10MHz
T
=25˚C
C
)
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
–10
)
–3
µs
(
f
,t
–1
stg
,t
on
– 0.3
– 0.1
Switching time t
– 0.03
– 0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
t
stg
t
on
t
f
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
)
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
)
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