Panasonic 2SB0948A, 2SB0948 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB948, 2SB948A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1445 and 2SD1445A
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB948
2SB948A
2SB948
2SB948A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB948
2SB948A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–20
–10
40
2
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A
TO–220 Full Pack Package(a)
min
typ
–20
–40
45
90
100
400
0.1
0.5
0.1
max
–50
–50
260
– 0.6
–1.5
1:Base
2:Collector
3:Emitter
Unit
µA
µA
V
V
V
MHz
pF
µs
µs
µs
1
Po wer Transistors 2SB948, 2SB948A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
Collector current IC (A
IC/IB=30
)
CE
)
–12
–10
)
A
(
–8
C
–6
–4
IB=–100mA
–80mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
–25˚C
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
TC=25˚C
–60mA
–50mA
–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
C
VCE=–2V
25˚C
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
25˚C
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
TC=100˚C
VCE=–10V
f=10MHz
T
C
IC/IB=30
–25˚C
)
=25˚C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
t
stg
t
f
Area of safe operation (ASO)
–100
–30
I
)
)
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
2SB948
2SB948A
)
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