Panasonic 2SB0947A Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB947, 2SB947A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB947
2SB947A
2SB947
2SB947A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
2SB947
2SB947A
Emitter cutoff current
Collector to emitter
voltage
2SB947
2SB947A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–15
–10
35
2
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –7A, IB = – 0.23A
IC = –7A, IB = – 0.23A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
TO–220 Full Pack Package(a)
min
typ
–20
–40
45
90
150
200
0.1
0.5
0.1
max
–50
–50
–50
260
– 0.6
–1.5
1:Base
2:Collector
3:Emitter
Unit
µA
µA
V
V
V
MHz
pF
µs
µs
µs
1
Po wer Transistors 2SB947, 2SB947A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
(3) With a 50 × 50 × 2mm
(4) Without heat sink
(2)
(3)
(4)
V
BE(sat)—IC
TC=–25˚C
25˚C
Al heat sink
Al heat sink
(P
=2W)
C
(1)
100˚C
IC/IB=30
CE
)
–12
–10
)
A
(
–8
C
–6
–4
IB=–160mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
100
TC=100˚C
–25˚C
25˚C
TC=25˚C
–100mA
–80mA
–60mA
–40mA
–30mA
–20mA
–10mA
C
VCE=–2V
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
V
CE(sat)—IC
25˚C
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
fT—I
C
TC=100˚C
VCE=–10V
f=10MHz
T
C
IC/IB=30
–25˚C
)
=25˚C
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
CB
f=1MHz
=25˚C
T
C
)
Collector current IC (A
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
ton, t
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
)
Collector current IC (A
, tf — I
stg
t
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=30
I
C/IB
(–I
B1=IB2
V
=–20V
CC
=25˚C
T
C
stg
t
f
30
10
Transition frequency f
3
1
– 0.01
)
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
Area of safe operation (ASO)
–100
–30
I
)
)
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
2SB947
2SB947A
)
2
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