Panasonic 2SB0942A, 2SB0942 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB942, 2SB942A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267 and 2SD1267A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB942
2SB942A
2SB942
2SB942A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
2SB942
2SB942A
2SB942
2SB942A
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
2SB942
2SB942A
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
Rank Q P
h
FE1
70 to 150 120 to 250
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–8
–4
40
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
=25˚C)
Conditions
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –4A, IB = – 0.4A
VCE = –10V, IC = – 0.1A, f = 10MHz
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
Note: Ordering can be made by the common rank (PQ rank h
rank classification.
TO–220 Full Pack Package(a)
min
typ
–60
–80
70
15
30
0.2
0.5
0.2
1:Base
2:Collector
3:Emitter
max
–400
–400
–700
–700
–1
250
–2
–1.5
= 70 to 250) in the
FE1
Unit
µA
µA
mA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SB942, 2SB942A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
V
CE(sat)—IC
25˚C
TC=100˚C
–25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
)
IC/IB=10
)
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=–120mA
–100mA
–80mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
VCE=–4V
25˚C
– 0.3 –3
Collector current IC (A
TC=25˚C
–60mA
–40mA
–20mA
–10mA
–8mA
–5mA
)
–10
–8
)
A
(
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
– 0.01
IC—V
BE
V
25˚C
TC=100˚C –25˚C
fT —I
C
VCE=–5V
f=10MHz
T
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
CE
=25˚C
C
=–4V
)
)
Area of safe operation (ASO) R
–100
–30
)
I
–10
CP
A
(
C
I
–3
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
DC
2SB942A
2SB942
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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